| 数据搜索系统,热门电子元器件搜索 |
|
IRFS3306 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited |
|
|
|||||||||||||||||||||||||||||
IRFS3306 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited |
|
1 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.cn isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor IRFS3306 · FEATURES · With TO-263( D2PAK ) packaging · High speed switching · Low gate input resistance · Standard level gate drive · Easy to use · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation · APPLICATIONS · Power supply · Switching applications · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGSS Gate-Source Voltage ± 20 V ID Drain Current-Continuous;Tc=25℃ Tc=100℃ 160 110 A IDM Drain Current-Single Pulsed 620 A PD Total Dissipation 230 W Tj Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-case thermal resistance 0.65 ℃ /W Rth(ch-a) Channel-to-ambient thermal resistance 40 ℃ /W |
类似零件编号 - IRFS3306 |
|
类似说明 - IRFS3306 |
|
|
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |