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ISCD122 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISCD122 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc website： www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Darlington Power Transistor ISCD122 DESCRIPTION · High DC Current Gain- : hFE = 1000(Min)@ IC= 3A · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) · Low Collector-Emitter Saturation Voltage- : VCE(sat) = 2.0V(Max)@ IC= 3A = 4.0V(Max)@ IC= 5A · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 8 A IB Base Current 120 mA PC Collector Power Dissipation TC=25℃ 20 W Collector Power Dissipation Ta=25℃ 1.75 Tj Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.92 ℃ /W |
类似零件编号 - ISCD122 |
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类似说明 - ISCD122 |
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