Elektronische Bauelemente

SWG7002K

Ω

Ω

Ω

-Channel Enhancement MOSFET

26-Sep-2017 Rev. A

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Condition

Drain-Source Breakdown Voltage

60

-

-

V

Drain-Source Breakdown Voltage

Temperature Coefficient

-

71

-

mV/°C

-

-

1

-

-

500

µA

Zero Gate Voltage Drain Current

-

-

100

nA

Gate-Source Leakage Current

-

-

±10

µA

Gate Threshold Voltage

2

1

-

2.5

V

Negative Threshold Temperature

Coefficient

2

-

4

-

mV/°C

-

-

1.8

Drain-Source On-Resistance

2

-

-

2.5

Forward Transfer conductance

2

-

80

-

S

Total Gate Charge

-

0.7

-

Threshold Gate Charge

-

0.1

-

Gate-Source Charge

-

0.3

-

Gate-Drain Charge

-

0.1

-

nC

Turn-On Delay Time

3

-

9.9

-

Rise Time

3

-

5

-

Turn-Off Delay Time

3

-

39.4

-

Fall Time

3

-

17.9

-

nS

Input Capacitance

-

32.8

-

Output Capacitance

-

5.4

-

Reverse Transfer Capacitance

-

2.9

-

pF

f=1MHz

Drain-Source Diode

-

-

1.4

Forward Diode Voltage

-

0.7

-

V

Notes:

1.

Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).

2.

Pulse Test: pulse width=300µs, duty cycle≦2%.

3.

Switching characteristics are independent of operating junction temperature.