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ISCPL17D 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited

部件名 ISCPL17D
功能描述  isc P-Channel MOSFET Transistor
PDF  2 Pages
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

ISCPL17D 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited

  ISCPL17D Datasheet HTML 1Page - Inchange Semiconductor Company Limited ISCPL17D Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
2
isc P-Channel MOSFET Transistor
ISCPL17D
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= -250μA
-100
V
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID= -250μA
-1
-3
V
RDS(on)
Drain-Source On-Resistance
VGS= -10V; ID= -15A
44
55
mΩ
IGSS
Gate-Source Leakage Current
VGS= ±20V; VDS= 0V
±100
nA
IDSS
Drain-Source Leakage Current
VDS= -100V; VGS= 0V
-1
μ
A
VSD
Diode forward voltage
IS= -10A, VGS = 0V
-1.2
V



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