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BCX53 数据表(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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BCX53 数据表(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page ![]() Elektronische Bauelemente BCX53 -1A, -100V PNP Plastic Encapsulate Transistor 11-Aug-2016 Rev. C Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 1 Base 3 Emitter Collector 24 AL RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION BCX53 is designed for medium power amplifier applications. FEATURES Low voltage High current MARKING PACKAGE INFORMATION Package MPQ Leader Size SOT-89 1K 7 inch ABSOLUTE MAXIMUM RATINGS (T A = 25°C unless otherwise specified) Parameter Symbol Rating Unit Collector-Base Voltage VCBO -100 V Collector-Emitter Voltage VCEO -80 V Emitter-Base Voltage VEBO -5 V Collector Current IC -1 A Collector Power Dissipation PC 500 mW Thermal Resistance from Junction to Ambient RθJA 250 °C/ W Junction and Storage Temperature TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO -100 - - V IC= -100µA , IE=0 Collector-Emitter Breakdown Voltage 1 V(BR)CEO -80 - - V IC= -10mA, IB=0 Emitter-Base Breakdown Voltage V(BR)EBO -5 - - V IE= -100µA, IC=0 Collector Cut-Off Current ICBO - - -0.1 µA VCB= -30V, IE=0 Emitter Cut-Off Current IEBO - - -0.1 µA VEB= -5V, IC=0 Collector-Emitter Saturation Voltage 1 VCE(sat) - - -0.5 V IC= -0.5A, IB= -50mA Base-Emitter Voltage 1 VBE(on) - - -1 V VCE= -2V, IC= -500mA 63 - - VCE= -2V, IC= -5mA 100 - 250 VCE= -2V, IC= -150mA DC Current Gain 1 hFE 40 - - VCE= -2V, IC= -0.5A Transition Frequency fT - 50 - MHz VCE= -5V, IC= -10mA, f=100MHz Notes: 1. Pulse test. SOT-89 A E C D B K H F G L J 1 2 3 4 Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 4.40 4.60 G 0.40 0.58 B 3.94 4.25 H 1.50 TYP C 1.40 1.60 J 3.00 TYP D 2.25 2.60 K 0.32 0.52 E 1.55 TYP. L 0.35 0.44 F 0.89 1.20 |
类似零件编号 - BCX53_16 |
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类似说明 - BCX53_16 |
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