STSJ18NF3LL datasheet(2/9 Pages) STMICROELECTRONICS

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STSJ18NF3LL

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Table 4: THERMAL DATA

(*) When Mounted on FR-4 board with 1 inch2 pad, 2 oz of Cu and t

> 10 sec.

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

Table 5: OFF

Table 6: ON (*)

Table 7: DYNAMIC

Rthj-c

Rthj-amb

Tstg

Thermal Resistance Junction-case

(*)Thermal Resistance Junction-ambient

Maximum Operating Junction Temperature

Storage Temperature

Max

1.8

41.7

150

-55 to 150

°C/W

°C

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID = 250 µA, VGS = 0

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

VDS = Max Rating TC = 125°C

µA

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ± 16 V

±100

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VGS(th)

Gate Threshold Voltage

VDS = VGS

ID = 250 µA

RDS(on)

Static Drain-source On

Resistance

VGS = 10 V

ID = 9 A

VGS = 4.5 V

ID = 9 A

0.016

0.019

0.022

Ω

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs (*)

Forward Transconductance

VDS=15 V

ID =9 A

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

VDS = 25V, f = 1 MHz, VGS = 0

800

250

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