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PDB-C109 数据表(PDF) 2 Page - Luna Innovations Incorporated |
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PDB-C109 数据表(HTML) 2 Page - Luna Innovations Incorporated |
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2 / 2 page ![]() Blue Enhanced Photoconductive Silicon Photodiode PDB-C109 WWW.LUNAINC.COM Precision – Control – Results Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. Page /2 REV 01-04-16 © 2016 Luna Optoelectronics. All rights reserved. Luna Optoelectronics, 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 OPTO-ELECTRICAL PARAMETERS Ta = 23°C UNLESS OTHERWISE NOTED PARAMETER TEST CONDITIONS MIN TYP MAX UNITS Short Circuit Current H=100 fc, 2850 K 450 500 - µA Dark Current VR = 10V - 5 15 nA Shunt Resistance VR = 10 mV 30 100 - MΩ Junction Capacitance VR = 10V, f = 1 MHz - 120 - pF Spectral Application Range Spot Scan 350 - 1100 nm Responsivity λ= 450nm V, V R =0V 0.15 0.17 - A/W Breakdown Voltage I = 10 µA 30 50 - V Noise Equivalent Power VR = 0V@ λ=Peak - 5x10 -13 - W/ √ Hz Response Time** RL = 50 Ω, V R =0V - 190 - nS RL = 50 Ω, V R =10V - 13 - **Response time of 10% to 90% is specified at 660nm wavelength light. TYPICAL PERFORMANCE SPECTRAL RESPONSE 0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70 Wavelength (nm) |
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