HSMP-3810 datasheet(3/9 Pages) HP

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Typical Parameters at T

C = 25°C

Part Number

Series Resistance

Carrier Lifetime

Reverse Recovery Time

Total Capacitance

HSMP-

S (Ω)

τ (ns)

rr (ns)

T (pF)

381x

1500

300

0.27 @ 50 V

Test Conditions

F = 1 mA

F = 50 mA

R = 10 V

f = 1 MHz

f = 100 MHz

R = 250 mA

F = 20 mA

90% Recovery

Typical Parameters at T

C = 25°C (unless otherwise noted), Single Diode

10000

1000

100

0.01

0.1

100

IF – FORWARD BIAS CURRENT (mA)

A = +85°C

A = +25°C

A = –55°C

Figure 2. RF Resistance vs. Forward

Bias Current.

0.15

0.30

0.25

0.20

0.35

0.40

0.45

410 12

816

18 20

REVERSE VOLTAGE (V)

Figure 1. RF Capacitance vs. Reverse

Bias.

1 MHz

30 MHz

frequency>100 MHz

120

110

100

1000

100

Diode Mounted as a

Series Attenuator

in a 50 Ohm Microstrip

and Tested at 123 MHz

DIODE RF RESISTANCE (OHMS)

Figure 3. 2nd Harmonic Input

Intercept Point vs. Diode RF

Resistance.

100

0.1

0.01

0.2

0.4

0.6

0.8

1.0

1.2

VF – FORWARD VOLTAGE (mA)

Figure 4. Forward Current vs.

Forward Voltage.

125

°C 25°C –50°C

INPUT

RF IN/OUT

Figure 5. Four Diode

π Attenuator. See Application Note 1048

for Details.

FIXED

BIAS

VOLTAGE

VARIABLE BIAS

Typical Applications for Multiple Diode Products

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