DAE6502.002

8 November 2011

3 (3)

EEPROM WRITE PROCEDURE

See figure 1 on previous page showing the

EEPROM write procedure.

Make sure in the beginning of the EEPROM write

procedure that the MAS6502 initial conditions are

met.

Connecting

VDD

triggers

power-on-reset

(POR) but to make sure the device is reset an

additional reset can be given using the XCLR pin or

serial bus.

value in this register disables the EEPROM write.

Next the data can be written to the EEPROM

memory one byte (8-bit) at a time. It is necessary to

have a delay of minimum 16ms after programming

each byte (8-bit). The success of each write can be

verified by reading back the data (8-bit) and

comparing it to the original byte (8-bit).

After all data bytes are written the EEPROM

memory can be protected from write and erasing by

Table 1 below shows the MAS6502 register and

EEPROM data addresses. See also the MAS6502

datasheet for further details of registers, EEPROM

and serial bus communication.

REGISTER AND EEPROM DATA ADDRESSES

Table 1. Register and EEPROM data addresses

A7

A6

A5

A4

A3

A2

A1

A0

HEX

(X=0)

Description

Note

X

0

0

0

0

0

0

0

00

EEPROM; erase internal clock oscillator

trimming, reserved!

E

X

0

0

A4

A3

A2

A1

A0

01…1F

EEPROM; erase data at address [A4:A0]

E

X

1

0

0

0

0

0

0

40

EEPROM; read or write internal clock

oscillator trimming, reserved!

E

X

1

0

A4

A3

A2

A1

A0

41…5F

EEPROM; read or write data at

address [A4:A0]

E

X

X

1

1

0

0

0

0

30

Reset register; contains no data,

write any data for reset

R

X

X

1

1

0

1

1

1

37

Test and trim control register

R

X

X

1

1

1

0

0

0

38

Oscillator frequency control register

R

X

X

1

1

1

0

0

1

39

Data input register for EEPROM

R

X

X

1

1

1

0

1

0

3A

Control register for EEPROM

R

X

X

1

1

1

0

1

1

3B

Write and erase enable for EEPROM

R

X

X

1

1

1

1

0

0

3C

Status register for EEPROM

R

X

X

1

1

1

1

0

1

3D

MSB conversion result

R

X

X

1

1

1

1

1

0

3E

LSB conversion result

R

X

X

1

1

1

1

1

1

3F

ADC control register

R

X = Don’t care, E = EEPROM, R= Register

MICRO ANALOG SYSTEMS OY CONTACTS

Micro Analog Systems Oy

Kutomotie 16

FI-00380 Helsinki, FINLAND

Tel. +358 10 835 1100

Fax +358 10 835 1109

http://www.mas-oy.com

NOTICE

Micro Analog Systems Oy reserves the right to make changes to the products contained in this data sheet in order to improve the design or

performance and to supply the best possible products. Micro Analog Systems Oy assumes no responsibility for the use of any circuits

shown in this data sheet, conveys no license under any patent or other rights unless otherwise specified in this data sheet, and makes no

claim that the circuits are free from patent infringement. Applications for any devices shown in this data sheet are for illustration only and

Micro Analog Systems Oy makes no claim or warranty that such applications will be suitable for the use specified without further testing or

modification.