AS7C4096 datasheet(1/9 Pages) ALSC

部件名	AS7C4096

功能描述	5V/3.3V 512K X8 CMOS SRAM

PDF	9 Pages

Scroll/Zoom	100%

制造商	ALSC [Alliance Semiconductor Corporation]

网页	https://www.alliancememory.com

标志

1 / 9 page

January 2005

AS7C4096

AS7C34096

5V/3.3V 512K × 8 CMOS SRAM

®

1/13/05; v.1.9

Alliance Semiconductor

P. 1 of 9

Features

• AS7C4096 (5V version)

• AS7C34096 (3.3V version)

• Industrial and commercial temperature

• Organization: 524,288 words × 8 bits

• Center power and ground pins

• High speed

- 10/12/15/20 ns address access time

- 5/6/7/8 ns output enable access time

• Low power consumption: ACTIVE

- 1375 mW (AS7C4096) / max @ 12 ns

- 576 mW (AS7C34096) / max @ 10 ns

• Low power consumption: STANDBY

- 110 mW (AS7C4096) / max CMOS

- 72 mW (AS7C34096) / max CMOS

• Equal access and cycle times

• Easy memory expansion with CE, OE inputs

• TTL-compatible, three-state I/O

• JEDEC standard packages

- 400 mil 36-pin SOJ

- 44-pin TSOP 2

• ESD protection

≥ 2000 volts

• Latch-up current

≥ 100 mA

Logic block diagram

524,288 × 8

Array

(4,194,304)

Input buffer

I/O8

I/O1

OE

CE

WE

Column decoder

Control

Circuit

A0

A1

A2

A3

A4

A5

A6

A7

VCC

GND

A8

A9

Pin arrangement

s

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

32

31

30

29

28

27

26

25

24

23

22

21

20

19

A15

OE

I/O8

I/O7

GND

VCC

I/O6

I/O5

A14

A13

A12

A11

A10

NC

A0

A1

A2

A3

A4

CE

I/O1

I/O2

VCC

GND

I/O3

I/O4

WE

A5

A6

A7

17

18

A8

A9

36

35

34

33

NC

A18

A17

A16

GND

VCC

I/O6

I/O5

NC

A14

A13

A12

A11

A10

A4

CE

I/O1

I/O2

VCC

GND

I/O3

I/O4

WE

A5

A6

A7

A8

A9

I/O8

I/O7

A1

A2

A3

A0

40

39

38

37

36

35

34

33

32

31

30

29

28

27

26

25

24

23

43

42

41

44

A16

A15

A17

5

6

7

8

9

10

11

12

13

14

15

16

17

18

19

20

21

22

2

3

4

1

NC

OE

A18

36-pin SOJ (400 mil)

44-pin TSOP 2

Selection guide

–10

–12

–15

–20

Unit

Maximum address access time

10

12

15

20

ns

Maximum outputenable access time

5

6

7

8

ns

Maximum operating current

AS7C4096

–

250

220

180

mA

AS7C34096

160

130

110

100

mA

Maximum CMOS standby current

AS7C4096

–

20

mA

AS7C34096

20

mA

类似零件编号 - AS7C4096

制造商	部件名	数据表	功能描述
Alliance Semiconductor ...	AS7C4096A	324Kb / 10P	5.0V 512K x 8 CMOS SRAM
	AS7C4096A-10JC	324Kb / 10P	5.0V 512K x 8 CMOS SRAM
	AS7C4096A-10JCN	324Kb / 10P	5.0V 512K x 8 CMOS SRAM
	AS7C4096A-10JI	324Kb / 10P	5.0V 512K x 8 CMOS SRAM
	AS7C4096A-10JIN	324Kb / 10P	5.0V 512K x 8 CMOS SRAM

More results

类似说明 - AS7C4096

制造商	部件名	数据表	功能描述
STMicroelectronics	M48T129Y	140Kb / 22P	3.3V-5V 1 Mbit 128Kb x8 TIMEKEEPER SRAM Apr-2000
	M48T513Y	145Kb / 23P	3.3V-5V 4 Mbit 512Kb x8 TIMEKEEPER SRAM 20-Jun-2000
	M48Z129Y	94Kb / 13P	3.3V/5V 1 Mbit 128Kb x8 ZEROPOWER SRAM 20-Jun-2000
	M68AF511A	129Kb / 18P	4 Mbit (512K x8), 5V Asynchronous SRAM 09-Oct-2002
Alliance Semiconductor ...	AS7C1025	196Kb / 9P	5V/3.3V 128K x8 CMOS SRAM (Revolutionary pinout)
	AS7C31026	239Kb / 10P	5V/3.3V 64Kx6 CMOS SRAM
	AS7C513	198Kb / 10P	5V/3.3V 32Kx6 CMOS SRAM
STMicroelectronics	M68AF511AL	93Kb / 18P	4 Mbit (512K x8), 5V Asynchronous SRAM 17-May-2002
Alliance Semiconductor ...	AS7C1026	238Kb / 10P	5V / 3.3V 64KX16 CMOS SRAM
Hynix Semiconductor	HY62V8400A	181Kb / 11P	512K x8 bit 3.3V Low Power CMOS slow SRAM