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16DR10 数据表(PDF) 2 Page - Nell Semiconductor Co., Ltd

部件名 16DR10
功能描述  Glass Passivated Standard Recovery Diodes
PDF  5 Pages
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制造商  NELLSEMI [Nell Semiconductor Co., Ltd]
网页  http://www.nellsemi.com
标志 NELLSEMI - Nell Semiconductor Co., Ltd

16DR10 数据表(HTML) 2 Page - Nell Semiconductor Co., Ltd

  16DR10 Datasheet HTML 1Page - Nell Semiconductor Co., Ltd 16DR10 Datasheet HTML 2Page - Nell Semiconductor Co., Ltd 16DR10 Datasheet HTML 3Page - Nell Semiconductor Co., Ltd 16DR10 Datasheet HTML 4Page - Nell Semiconductor Co., Ltd 16DR10 Datasheet HTML 5Page - Nell Semiconductor Co., Ltd  
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FORWARD CONDUCTION
PARAMETER
SYMBOL
UNIT
THERMAL AND MECHANICAL SPECIFCATIONS
TEST CONDITIONS
VALUES
Maximum average forward current
at case temperature
IF(AV)
180° conduction, half sine wave
IF(RMS)
Maximum RMS forward current
16
A
140
ºC
25
K/W
Maximum on-repetitive peak
reverse power
10μs square pulse, TJ = TJ maximum
Maximum peak, one-cycle forward,
non-reptitive surge current
IFSM
t = 10ms
t = 8.3ms
t = 10ms
t
= 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
No voltage
reapplied
100%VRRM
reapplied
No voltage
reapplied
100%VRRM
reapplied
2
I t
Sinusoidal half wave,
initial TJ = TJ maximum
15
350
370
295
310
612
558
435
395
2
A s
A
A
6125
t = 0.1 to 10 ms, no voltage reapplied
2
I √t
Maximum l²t for fusing
Maximum l²√t for fusing
Maximum forward voltage drop
VFM
1.25
2
A s
V
lpk = 50 A, TJ = 25˚C, tp = 400µs rectangular wave
(1) Avalanche only for avalanche version, all other parameters the same as 16D
Note
PARAMETER
SYMBOL
UNITS
TEST CONDITIONS
VALUES
Maximum junction operating
temperature range
Maximum storage temperature range
- 65 to175
- 65 to 200
ºC
0.5
K/W
Maximum thermal resistace,
junction to case
Maximum thermal resistance
case to heatsink
1.6
(13)
(10)
6
0.21
(lbf · in)
N · m
Allowable mounting torque
Approximate weight
Case style
DO-203AA (DO-4)
TJ
Tstg
RthJC
RthCS
(lbf · in)
N · m
g
oz.
Not lubricated threads
Lubricated threads
Mounting surface, smooth, flat and greased
DC operation
See dimensions - link at the end of datasheet
PR(1)
1.5 +0
-10%
1.2
+0
-10%
ΔRthJC CONDUCTION
CONDUCTION ANGEL
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
UNITS
TEST CONDUCTIONS
K/W
180˚
120˚
90˚
60˚
30˚
0.31
0.38
0.49
0.72
1.20
0.23
0.40
0.54
0.75
1.21
TJ = TJ maximum
• The table above shows the increment of thermal resistance RthJC when devices
Note
operate at different conduction angles than DC
Page 2 of 5
www.nellsemi.com
SEMICONDUCTOR
RoHS
RoHS
16D(R)Series
Nell High Power Products



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