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16DR10 数据表(PDF) 2 Page - Nell Semiconductor Co., Ltd |
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16DR10 数据表(HTML) 2 Page - Nell Semiconductor Co., Ltd |
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2 / 5 page ![]() FORWARD CONDUCTION PARAMETER SYMBOL UNIT THERMAL AND MECHANICAL SPECIFCATIONS TEST CONDITIONS VALUES Maximum average forward current at case temperature IF(AV) 180° conduction, half sine wave IF(RMS) Maximum RMS forward current 16 A 140 ºC 25 K/W Maximum on-repetitive peak reverse power 10μs square pulse, TJ = TJ maximum Maximum peak, one-cycle forward, non-reptitive surge current IFSM t = 10ms t = 8.3ms t = 10ms t = 8.3ms t = 10ms t = 8.3ms t = 10ms t = 8.3ms No voltage reapplied 100%VRRM reapplied No voltage reapplied 100%VRRM reapplied 2 I t Sinusoidal half wave, initial TJ = TJ maximum 15 350 370 295 310 612 558 435 395 2 A s A A 6125 t = 0.1 to 10 ms, no voltage reapplied 2 I √t Maximum l²t for fusing Maximum l²√t for fusing Maximum forward voltage drop VFM 1.25 2 A √s V lpk = 50 A, TJ = 25˚C, tp = 400µs rectangular wave (1) Avalanche only for avalanche version, all other parameters the same as 16D Note PARAMETER SYMBOL UNITS TEST CONDITIONS VALUES Maximum junction operating temperature range Maximum storage temperature range - 65 to175 - 65 to 200 ºC 0.5 K/W Maximum thermal resistace, junction to case Maximum thermal resistance case to heatsink 1.6 (13) (10) 6 0.21 (lbf · in) N · m Allowable mounting torque Approximate weight Case style DO-203AA (DO-4) TJ Tstg RthJC RthCS (lbf · in) N · m g oz. Not lubricated threads Lubricated threads Mounting surface, smooth, flat and greased DC operation See dimensions - link at the end of datasheet PR(1) 1.5 +0 -10% 1.2 +0 -10% ΔRthJC CONDUCTION CONDUCTION ANGEL SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION UNITS TEST CONDUCTIONS K/W 180˚ 120˚ 90˚ 60˚ 30˚ 0.31 0.38 0.49 0.72 1.20 0.23 0.40 0.54 0.75 1.21 TJ = TJ maximum • The table above shows the increment of thermal resistance RthJC when devices Note operate at different conduction angles than DC Page 2 of 5 www.nellsemi.com SEMICONDUCTOR RoHS RoHS 16D(R)Series Nell High Power Products |
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