150FDR10 datasheet(4/6 Pages) NELLSEMI

4 / 6 page

SEMICONDUCTOR

Nell High Power Products

RoHS

150FD(R)Series

Fig.4 Forward power loss characteristics

Average Forward Current (A)

Maximum Allowable Ambient Temperature (°C)

0.5

K/W

- D

elta

thS

0.4

K/W

0.6 K

0.2

K/W

0.8 K/W

1.2 K/W

90°

60°

30°

120°

180°

300

250

200

100

200

Conduction Period

T = 175°C

250

100

120

140

160

180

150

200

100

300

RMS Limit

Fig.5 Maximum non-repetitive surge current

Fig.6 Maximum non-repetitive surge current

Fig.7 Forward voltage drop characteristics

Fig.8 Thermal lmpedance R

characteristic

thJC

Number of equal amplitude half cycle

current pulses(N)

Pulse train duration (S)

Instantaneous forward voltage (V)

100

1000

10000

0.5

1.5

2.5

Square wave pulse duration (S)

At any rated load condition and with

rated vrrm applied following surge.

lnitial T =175

°C

@ 60 Hz 0.0083 s

@ 50 Hz 0.0100 s

1500

2000

2500

3000

3500

1000

500

100

Per Junction

4000

3500

3000

2500

2000

1500

1000

500

0.01

0.1

Maximum non repetitive surge current

versus pulse train duration.

Control of conduction may not be maintained.

lnitial T = 175

°C

no voltage reapplied

rated V

reapplied

rrm

@ 50 Hz

Per Junction

0.1

0.01

0.001

0.01

0.1

Steady State Value

RthJC = 0.3 K/W

(DC Operation)

T = 25

°C

T = 175

°C

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