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1998

©

Document No. D16135EJ2V0DS00 (2nd edition)

Date Published April 2002 N CP(K)

Printed in Japan

SILICON TRANSISTORS

2SC2885, 2946, 2946(1)

NPN SILICON

EPITAXIAL TRANSISTOR

FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING

DATA SHEET

2002

The 2SC2885, 2946, and 2946(1) are high-voltage high-speed switching power transistors featuring a small

package (MP-3) which is suitable for high-density mounting. These transistors are ideal for drivers in DC/DC

converters and switching regulators.

There are three types of transistors selectable according to the reliability requirments: 2SC2946 and 2946(1) for

industrial use, 2SC2885 for general use. The 2SC2946(1) is produced with leads so as to enable mounting directly in

a hybrid IC.

QUALITY GRADES

• Standard

Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No. C11531E) published by NEC

Corporation to know the specification of quality grade on the devices and its recommended applications.

ABSOLUTE MAXIMUM RATINGS (Ta = 25

°°°°C)

Parameter

Symbol

Ratings

Unit

Collector to base voltage

330

V

Collector to emitter voltage

200

V

Emitter to base voltage

7.0

V

Collector current (DC)

2.0

A

Collector current (pulse)

A

Base current (DC)

1.0

A

Total power dissipation

°C)

15

W

Total power dissipation

°C)

600

mW

Junction temperature

150

°C

Storage temperature

−55 to +150

°C

*PW

≤ 300

µs, duty cycle ≤ 10%