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2SC3569 数据表(PDF) 2 Page - NEC

部件名 2SC3569
功能描述  NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING
PDF  6 Pages
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制造商  NEC [NEC]
网页  http://www.nec.com/
标志 NEC - NEC

2SC3569 数据表(HTML) 2 Page - NEC

  2SC3569 Datasheet HTML 1Page - NEC 2SC3569 Datasheet HTML 2Page - NEC 2SC3569 Datasheet HTML 3Page - NEC 2SC3569 Datasheet HTML 4Page - NEC 2SC3569 Datasheet HTML 5Page - NEC 2SC3569 Datasheet HTML 6Page - NEC  
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Data Sheet D16187EJ1V0DS
2
2SC3569
ELECTRICAL CHARACTERISTICS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector to emitter voltage
VCEO(SUS)
IC = 0.5 A, IB1 = 0.1 A, L = 1 mH
400
V
Collector to emitter voltage
VCEX(SUS)1
IC = 0.5 A, IB1 =
−IB2 = 0.1 A,
L = 180
µH, clamped
450
V
Collector to emitter voltage
VCEX(SUS)2
IC = 1.0 A, IB1 = 0.2 A,
−IB2 = 0.1 A,
L = 180
µH, clamped
400
V
Collector cutoff current
ICBO
VCB = 400 V, IE = 0
10
µA
Collector cutoff current
ICER
VCE = 400 V, RBE = 51
Ω, Ta = 125°C
1.0
mA
Collector cutoff current
ICEX1
VCE = 400 V, VBE(OFF) =
−1.5 V
10
µA
Collector cutoff current
ICEX2
VCE = 400 V, VBE(OFF) =
−1.5 V,
Ta = 125
°C
1.0
mA
Emitter cutoff current
IEBO
VEB = 5.0 V, IC = 0
10
µA
DC current gain
hFE1*VCE = 5.0 V, IC = 0.2 A
20
80
DC current gain
hFE2*VCE = 5.0 V, IC = 0.5 A
10
Collector saturation voltage
VCE(sat)*IC = 0.7 A, IB = 0.14 A
1.0
V
Base saturation voltage
VBE(sat)*IC = 0.7 A, IB = 0.14 A
1.2
V
Turn-on time
ton
1.0
µs
Storage time
tstg
2.5
µs
Fall time
tf
IC = 0.7 A, RL = 214
Ω,
IB1 =
−IB2 = 0.14 A, VCC ≅ 150 V
Refer to the test circuit.
1.0
µs
* Pulse test PW
≤ 350
µs, duty cycle ≤ 2%
hFE CLASSIFICATION
Marking
M
L
K
HFE1
20 to 40
30 to 60
40 to 80
TYPICAL CHARACTERISTICS (Ta = 25
°°°°C)
Collector to Emitter Voltage VCE (V)
Case Temperature TC (
°C)



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