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BCR8CS 数据表(PDF) 3 Page - Mitsubishi Electric Semiconductor |
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BCR8CS 数据表(HTML) 3 Page - Mitsubishi Electric Semiconductor |
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3 / 5 page ![]() Feb.1999 10–1 23 101 57 102 23 5 7 103 23 5 7 104 101 7 5 3 2 100 7 5 3 2 7 5 3 2 VGT = 1.5V PG(AV) = 0.5W VGM = 10V PGM = 5W IGM = 2A IFGT I IRGT I, IRGT III VGD = 0.2V 2.2 2.4 0 2.0 1.8 1.6 1.4 1.2 0.6 0.8 0.4 0.2 23 10–1 57 100 23 5 7 101 23 5 7 102 23 102 57 103 1.0 101 103 7 5 3 2 –60 –20 20 102 7 5 3 2 60 100 140 4 4 –40 0 40 80 120 TYPICAL EXAMPLE 0 –40 101 103 7 5 3 2 –60 –20 20 102 7 5 3 2 60 100 140 4 4 40 80 120 IRGT I IFGT I IRGT III TYPICAL EXAMPLE 16 12 10 6 2 0 16 8 2 0 4 6 10 12 14 4 8 14 360° CONDUCTION RESISTIVE, INDUCTIVE LOADS 160 120 100 60 20 0 16 8 2 0 4 6 10 12 14 40 80 140 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 360° CONDUCTION RESISTIVE, INDUCTIVE LOADS MAXIMUM ON-STATE POWER DISSIPATION RMS ON-STATE CURRENT (A) ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT RMS ON-STATE CURRENT (A) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) CONDUCTION TIME (CYCLES AT 60Hz) GATE CURRENT (mA) GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE JUNCTION TEMPERATURE (°C) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE JUNCTION TEMPERATURE (°C) GATE CHARACTERISTICS MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR8CS MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE |
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