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DGD2003 数据表(PDF) 4 Page - Diodes Incorporated

部件名 DGD2003
功能描述  HALF-BRIDGE GATE DRIVER
PDF  11 Pages
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制造商  DIODES [Diodes Incorporated]
网页  http://www.diodes.com
标志 DIODES - Diodes Incorporated

DGD2003 数据表(HTML) 4 Page - Diodes Incorporated

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DGD2003
Document Number DS38690 Rev. 2 - 2
4 of 11
www.diodes.com
February 2019
© Diodes Incorporated
DGD2003
DC Electrical Characteristics (VBIAS (VCC, VBS) = 15V, @TA = +25°C, unless otherwise specified.) (Note 7)
Parameter
Symbol
Min
Typ
Max
Unit
Conditions
Logic “1” (HIN) and Logic “0” (LIN*) Input Voltage
VIH
2.5
V
VCC = 10V to 20V
Logic “0” (HIN) and Logic “1” (LIN*) Input Voltage
VIL
0.8
V
VCC = 10V to 20V
High Level Output Voltage, VBIAS - VO
VOH
0.05
0.2
V
IO = 2mA
Low Level Output Voltage, VO
VOL
0.02
0.1
V
IO = 2mA
Offset Supply Leakage Current
ILK
50
µA
VB = VS = 200V
Quiescent VBS Supply Current
IBSQ
60
100
µA
VIN = 0V or 5V
Quiescent VCC Supply Current
ICCQ
350
500
µA
VIN = 0V or 5V
Logic “1” Input Bias Current
IIN+
3
10
µA
HIN = 5V, LIN* = 0V
Logic “0” Input Bias Current
IIN-
5
µA
HIN = 0V, LIN* = 5V
VCC Supply Undervoltage Positive Going Threshold
VCCUV+
8.0
8.9
9.8
V
VCC Supply Undervoltage Negative Going Threshold
VCCUV-
7.4
8.2
9.0
V
VBS Supply Undervoltage Positive Going Threshold
VBSUV+
4.5
5.5
6.5
V
VBS Supply Undervoltage Negative Going Threshold
VBSUV-
4.2
5.2
6.2
V
Output High Short Circuit Pulsed Current
IO+
130
290
mA
VO
= 0V, PW ≤ 10µs
Output Low Short Circuit Pulsed Current
IO-
270
600
mA
VO
= 15V, PW ≤ 10µs
Note:
7. The VIN and IIN parameters are applicable to the two logic pins: HIN and LIN*. The VO and IO parameters are applicable to the respective output pins:
HO and LO.
AC Electrical Characteristics (VBIAS (VCC, VBS) = 15V, CL = 1000pF, @TA = +25°C, unless otherwise specified.)
Parameter
Symbol
Min
Typ
Max
Unit
Conditions
Turn-On Propagation Delay
tON
680
820
ns
VS = 0V
Turn-Off Propagation Delay
tOFF
150
220
ns
VS = 200V
Delay Matching, HO and LO Turn-On/Turn-Off
tDM
60
ns
Turn-On Rise Time
tR
70
170
ns
VS = 0V
Turn-Off Fall Time
tF
35
90
ns
VS = 0V
Deadtime: tDT LO-HO and tDT HO-LO
tDT
300
420
650
ns



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