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DGD2012 数据表(PDF) 4 Page - Diodes Incorporated

部件名 DGD2012
功能描述  HIGH-SIDE AND LOW-SIDE GATE DRIVER
PDF  11 Pages
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制造商  DIODES [Diodes Incorporated]
网页  http://www.diodes.com
标志 DIODES - Diodes Incorporated

DGD2012 数据表(HTML) 4 Page - Diodes Incorporated

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DGD2012
DC Electrical Characteristics (VBIAS (VCC, VBS) = 15V, @TA = +25°C, unless otherwise specified.) (Note 7)
Parameter
Symbol
Min
Typ
Max
Unit
Conditions
Logic “1” Input Voltage
VIH
2.5
V
VCC = 10V to 20V
Logic “0” Input Voltage
VIL
0.8
V
VCC = 10V to 20V
High Level Output Voltage, VBIAS - VO
VOH
1.4
V
IO = 0A
Low Level Output Voltage, VO
VOL
0.2
V
IO = 20mA
Offset Supply Leakage Current
ILK
50
µA
VB = VS = 200V
Quiescent VBS Supply Current
IBSQ
20
60
150
µA
VIN = 0V or 5V
Quiescent VCC Supply Current
ICCQ
50
120
240
µA
VIN = 0V or 5V
Logic “1” Input Bias Current
IIN+
25
60
µA
VIN = 5V
Logic “0” Input Bias Current
IIN-
5.0
µA
VIN = 0V
VBS Supply Undervoltage Positive Going Threshold
VBSUV+
8.0
8.9
9.8
V
VBS Supply Undervoltage Negative Going Threshold
VBSUV-
7.4
8.2
9.0
V
VCC Supply Undervoltage Positive Going Threshold
VCCUV+
8.0
8.9
9.8
V
VCC Supply Undervoltage Negative Going Threshold
VCCUV-
7.4
8.2
9.0
V
Output High Short Circuit Pulsed Current
IO+
1.4
1.9
A
VO = 0V, PW ≤ 10µs
Output Low Short Circuit Pulsed Current
IO-
1.7
2.3
A
VO = 15V, PW ≤ 10µs
Note:
7. The VIN and IIN parameters are applicable to the two logic pins: HIN and LIN. The VO and IO parameters are applicable to the respective output pins: HO
and LO.
AC Electrical Characteristics (VBIAS (VCC, VBS) = 15V, CL = 1000pF, @TA = +25°C, unless otherwise specified.)
Parameter
Symbol
Min
Typ
Max
Unit
Conditions
Turn-On Propagation Delay
tON
180
270
ns
VS = 0V
Turn-Off Propagation Delay
tOFF
220
330
ns
VS = 0V or 200V
Delay Matching, HO & LO Turn-On/Off
tDM
35
ns
Turn-On Rise Time
tR
40
60
ns
VS = 0V
Turn-Off Fall Time
tF
20
35
ns
VS = 0V
DGD2012
Document number: DS41324 Rev. 3 - 2
4 of 11
www.diodes.com
February 2019
© Diodes Incorporated



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