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2SC5980 数据表(PDF) 2 Page - Sanyo Semicon Device

部件名 2SC5980
功能描述  NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications
PDF  4 Pages
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制造商  SANYO [Sanyo Semicon Device]
网页  https://www.sanyo-av.com/us/
标志 SANYO - Sanyo Semicon Device

2SC5980 数据表(HTML) 2 Page - Sanyo Semicon Device

  2SC5980 Datasheet HTML 1Page - Sanyo Semicon Device 2SC5980 Datasheet HTML 2Page - Sanyo Semicon Device 2SC5980 Datasheet HTML 3Page - Sanyo Semicon Device 2SC5980 Datasheet HTML 4Page - Sanyo Semicon Device  
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2SC5980
No.8091-2/4
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Gain-Bandwidth Product
fT
VCE=10V, IC=500mA
330
MHz
Output Capacitance
Cob
VCB=10V, f=1MHz
28
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=3.5A, IB=175mA
125
190
mV
IC=2A, IB=40mA
100
150
mV
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=2A, IB=40mA
0.83
1.2
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=10µA, IE=0
100
V
Collector-to-Emitter Breakdown Voltage
V(BR)CES
IC=100µA, RBE=∞
100
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=1mA, RBE=∞
50
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=10µA, IC=0
6
V
Turn-ON Time
ton
See specified Test Circuit.
30
ns
Storage Time
tstg
See specified Test Circuit.
420
ns
Fall Time
tf
See specified Test Circuit.
25
ns
Package Dimensions
Package Dimensions
unit : mm
unit : mm
2045B
2044B
Switching Time Test Circuit
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
5.0
6.5
0.85
0.7
0.6
0.5
1.2
2.3
0.5
1
23
4
2.3
2.3
VR
RB
VCC=25V
IC=20IB1= --20IB2=2.5A
VBE= --5V
+
+
50
Ω
INPUT
OUTPUT
RL
470
µF
100
µF
PW=20
µs
IB1
D.C.
≤1%
IB2
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
6.5
2.3
0.5
5.0
0.85
0.5
1.2
0 to 0.2
2.3
2.3
0.6
12
4
3



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