P0690ATFS datasheet(1/4 Pages) NIKOSEM

部件名	P0690ATFS

功能描述	N-Channel High Voltage Mode

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制造商	NIKOSEM [NIKO SEMICONDUCTOR CO., LTD.]

网页	http://www.niko-sem.com

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1

D-36-5

N-Channel High Voltage Mode

Field Effect Transistor

NIKO-SEM

REV 1.0

P0690ATF:TO-220F

P0690ATFS:TO-220FS

Halogen-Free & Lead-Free

ABSOLUTE MAXIMUN RATINGS(TA=25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

LIMITS

UNITS

Drain-Source Voltage

VDS

900

V

Gate-Source Voltage

VGS

±30

V

Continuous Drain Current

2

TC = 25 °C

ID

6

A

TC = 100 °C

3.5

Pulsed Drain Current

1

IDM

18

Avalanche Current

3

IAS

3

Avalanche Energy

3

EAS

45

mJ

Power Dissipation

TC = 25 °C

PD

52

W

TC = 100 °C

20

Operating Junction & Storage Temperature Range

Tj, Tstg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

UNITS

Junction-to-Case

RJC

2.4

°C / W

Junction-to-Ambient

RJA

62.5

°C / W

1Pulse width limited by maximum junction temperature.

2Ensure that the channel temperature does not exceed 150°C.

3V

DD = 50V , L = 10mH ,starting TJ = 25°C.

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS

UNIT

MIN

TYP

MAX

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = 250A

900

V

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250A

2.5

3.8

4.5

Gate-Body Leakage

IGSS

VDS = 0V, VGS = ±30V

±100

nA

Gate Voltage Drain Current

IDSS

VDS = 900V, VGS = 0V , TC = 25 °C

1

A

VDS = 720V, VGS = 0V , TC = 100 °C

100

PRODUCT SUMMARY

V(BR)DSS

RDS(ON)

ID

900V

2.35Ω

6A

G

D

S

1. GATE

2. DRAIN

3. SOURCE

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