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PLMT01SPHTA/EM 数据表(PDF) 4 Page - Texas Instruments |
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PLMT01SPHTA/EM 数据表(HTML) 4 Page - Texas Instruments |
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4 / 23 page ![]() 4 LMT01-SP SNIS205 – JANUARY 2019 www.ti.com Product Folder Links: LMT01-SP Submit Documentation Feedback Copyright © 2019, Texas Instruments Incorporated (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 6 Specifications 6.1 Absolute Maximum Ratings over operating temperature range (unless otherwise noted) (1). MIN MAX UNIT Voltage drop (VP – VN) −0.3 6 V Storage temperature, Tstg −65 175 °C (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 6.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±750 (1) During transmission of pulses at a high level. 6.3 Recommended Operating Conditions MIN MAX UNIT Free-air temperature −55 125 °C Voltage drop (VP – VN) 2(1) 5.5 V (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. 6.4 Thermal Information THERMAL METRIC(1) LMT01-SP UNIT HTA (CTO-92) 2 PINS RθJA Junction-to-ambient thermal resistance 124.7 °C/W RθJC(top) Junction-to-case (top) thermal resistance 51.8 °C/W RθJB Junction-to-board thermal resistance 64.8 °C/W ψJT Junction-to-top characterization parameter 3.8 °C/W ψJB Junction-to-board characterization parameter 63.6 °C/W |
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