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REF3440MDBVTEP 数据表(PDF) 13 Page - Texas Instruments |
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REF3440MDBVTEP 数据表(HTML) 13 Page - Texas Instruments |
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13 / 28 page ![]() J A D JA T T P R T u REF(MAX) REF(MIN) 6 REF V V Drift = 10 V Temperature Range · § u ¸ ¨ u © ¹ Bandgap core Buffer Digital Enable Blocks Inrush EN IN GNDF OUTS Current Vdd GNDS OUTF Limit 13 REF3425-EP, REF3430-EP, REF3433-EP, REF3440-EP www.ti.com SBAS942A – DECEMBER 2018 – REVISED MARCH 2019 Product Folder Links: REF3425-EP REF3430-EP REF3433-EP REF3440-EP Submit Documentation Feedback Copyright © 2018–2019, Texas Instruments Incorporated 9 Detailed Description 9.1 Overview The REF34xx-EP is family of low-noise, precision bandgap voltage references that are specifically designed for excellent initial voltage accuracy and drift. The Functional Block Diagram is a simplified block diagram of the REF34xx-EP showing basic band-gap topology. 9.2 Functional Block Diagram 9.3 Feature Description 9.3.1 Supply Voltage The REF34xx-EP family of references features an extremely low dropout voltage. For loaded conditions, a typical dropout voltage versus load is shown on the front page. The REF34xx-EP features a low quiescent current that is extremely stable over changes in both temperature and supply. The typical room temperature quiescent current is 72 µA, and the maximum quiescent current over temperature is just 95 µA. Supply voltages below the specified levels can cause the REF34xx-EP to momentarily draw currents greater than the typical quiescent current. Use a power supply with a fast rising edge and low output impedance to easily prevent this issue. 9.3.2 Low Temperature Drift The REF34xx-EP is designed for minimal drift error, which is defined as the change in output voltage over temperature. The drift is calculated using the box method, as described by Equation 2: (2) 9.3.3 Load Current The REF34xx-EP family is specified to deliver a current load of ±10 mA per output. The VREF output of the device are protected from short circuits by limiting the output short-circuit current to 18 mA. The device temperature increases according to Equation 3: where • TJ = junction temperature (°C), • TA = ambient temperature (°C), • PD = power dissipated (W), and • RθJA = junction-to-ambient thermal resistance (°C/W) (3) The REF34xx-EP maximum junction temperature must not exceed the absolute maximum rating of 150°C. |
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