GD32 datasheet(23/28 Pages) GIGADEVICE

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SPI NAND

Flash

3.0V

GD SPI NAND Flash Features

◆

Power Supply Voltage: 2.7V~3.6V

◆

High Speed Clock Frequency

- 120MHz for fast read with 30PF load

- Quad I/O Data transfer up to 480Mbits/s

◆

Flexible Memory Architecture

1Gbit & 2Gbit:

- 2048-Byte page for read and program, spare

area128-Byte

- (128K + 8K)-Byte per block for erase

◆

Enhanced Access Performance

- 2K-Byte cache for fast random read for 1G & 2G

- Cache read and cache program

◆

Advanced Feature for NAND

- Internal ECC option

- Internal data move by page with ECC

- Promised good block0 with ECC

◆

Power Supply Voltage: 1.7V~2.0V

◆

High Speed Clock Frequency

- 120MHz for fast read with 30PF load

- Quad I/O Data transfer up to 480Mbits/s

◆

Flexible Memory Architecture

1Gbit & 2Gbit:

- 2048-Byte page for read and program, spare area

128-Byte

- (128K + 8K)-Byte per block for erase

◆

Enhanced Access Performance

- 2K-Byte cache for fast random read for 1G & 2G

- Cache read and cache program

◆

Advanced Feature for NAND

- Internal ECC option

- Internal data move by page with ECC

- Promised good block0 with ECC

GD SPI NAND Flash Product List

Part No.

Density

Package

GD5F2GQ4R

2Gb

LGA8 8*6mm

GD5F1GQ4R

1Gb

LGA8 8*6mm

1.8V

Part No.

Density

Package

GD5F2GQ4U

2Gb

LGA8 8*6mm

GD5F1GQ4U

1Gb

WSON8 8*6mm

GD SPI NAND Flash Part Number Deﬁnition

GD32 数据表(PDF) 23 Page - GigaDevice Semiconductor (Beijing) Inc.

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