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FS9721_LP1 数据表(PDF) 21 Page - Fortune Semiconductor Corp. |
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FS9721_LP1 数据表(HTML) 21 Page - Fortune Semiconductor Corp. |
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21 / 41 page ![]() FS9721_LP1 Rev. 2.0 20/41 14.4 Power System C7 10μF C3 10μF C1 10μF C8 10μF C2 10μF 3V BT1 REFI REFO VDDA VB VGG CA CB VDD AGND VSS FS9721_LP1 R10 40k R7 20k R2 200k R3 82k VR2 10k RLCD C16 0.1μF Diagram 8 Power Circuit 2*VDD 3.9V 1.2V 0.4V 1.5V 1.5V VGG VDDA REFO REFI VDD AGND VSS FS9721_LP1 RLCD 3V Diagram 9 Relative Voltage of Each Point VB is the bias current input point in IC. The increase of R3 will reduce the current consumption in IC, but the shortage of bias current will affect the input range of AC measurement. AGND is the analog ground connection. Its value is equal to the middle point of battery voltage. The point value is generated in the IC and cannot connect to the middle point of battery. C7 and C8 are bypath capacitance, and also to make AGND regulated to VDD and VSS. C3 is power pump capacitance. IC makes VDD voltage pass C3 to charge/discharge to rise VGG being about double voltage of VDD. VDDA is the output voltage after the regulation of VGG in the IC. It is about 3.9V that relative to VSS. REFO is the bandgap power source in the IC. It is about 1.2V that relative to AGND and has 100ppm/ stability. ℃ |
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