STTH60L06C datasheet(2/6 Pages) STMICROELECTRONICS

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STTH60L06C

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Table 4: Thermal Resistance

Table 5: Static Electrical Characteristics (per diode)

Pulse test:

* tp = 5 ms,

δ < 2%

** tp = 380 µs,

δ < 2%

To evaluate the conduction losses use the following equation: P = 0.95 x IF(AV) + 0.010 IF

(RMS)

Table 6: Dynamic Characteristics (per diode)

Symbol

Parameter

Value (max).

Unit

Rth(j-c)

Junction to case

Per diode

1.05

°C/W

Total

0.68

Rth(c)

Coupling

0.3

°C/W

When the diodes 1 and 2 are used simultaneously:

∆ Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)

Symbol

Parameter

Test conditions

Min.

Typ

Max.

Unit

IR *

Reverse leakage current Tj = 25°C

VR = VRRM

µA

Tj = 150°C

800

VF **

Forward voltage drop

Tj = 25°C

IF = 30A

1.55

Tj = 150°C

1.0

1.25

Tj = 25°C

IF =60A

1.78

Tj = 150°C

1.24

1.55

Symbol

Parameter

Test conditions

Min.

Typ Max.

Unit

trr

Reverse recovery

time

Tj = 25°C

IF = 0.5A Irr = 0.25A IR =1A

IF = 1A dIF/dt = 50 A/µs VR =30V

IRM

Reverse recovery

current

Tj = 125°C IF = 30A

VR = 400V

dIF/dt = 100 A/µs

11.5

tfr

Forward recovery

time

Tj = 25°C

IF = 30A

dIF/dt = 100 A/µs

VFR = 1.1 x VFmax

500

VFP

Forward recovery

voltage

Tj = 25°C

IF = 30A

dIF/dt = 100 A/µs

VFR = 1.1 x VFmax

2.5

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