AM29PDL640G datasheet(2/61 Pages) SPANSION

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PRELIMINARY

This document contains information on a product under development at Advanced Micro Devices. The information

is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed

product without notice.

Publication# 26573

Rev: B Amendment/+1

Issue Date: February 26, 2003

Am29PDL640G

64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash

Memory with Enhanced VersatileIOTM Control

DISTINCTIVE CHARACTERISTICS

ARCHITECTURAL ADVANTAGES

■ 64 Mbit Page Mode device

— Page size of 8 words: Fast page read access from random

locations within the page

■ Single power supply operation

— Full Voltage range: 2.7 to 3.1 volt read, erase, and program

operations for battery-powered applications

■ Simultaneous Read/Write Operation

— Data can be continuously read from one bank while

executing erase/program functions in another bank

— Zero latency switching from write to read operations

■ FlexBank Architecture

— 4 separate banks, with up to two simultaneous operations

per device

— Bank A: 8 Mbit (4 Kw x 8 and 32Kw x 15)

— Bank B: 24 Mbit (32 Kw x 48)

— Bank C: 24 Mbit (32 Kw x 48)

— Bank D: 8 Mbit (4 Kw x 8 and 32 Kw x 15)

■ Enhanced VersatileI/OTM (V

IO) Control

— Output voltage generated and input voltages tolerated on all

control inputs and I/Os is determined by the voltage on the

VIO pin

■ SecSiTM (Secured Silicon) Sector region

— Up to 128 words accessible through a command sequence

■ Both top and bottom boot blocks in one device

■ Manufactured on 0.17 µm process technology

■ 20-year data retention at 125°C

■ Minimum 1 million erase cycle guarantee per sector

PERFORMANCE CHARACTERISTICS

■ High Performance

— Page access times as fast as 25 ns

— Random access times as fast as 65 ns

■ Power consumption (typical values at 10 MHz)

— 25 mA active read current

— 15 mA program/erase current

— 0.2 µA typical standby mode current

SOFTWARE FEATURES

■ Software command-set compatible with JEDEC 42.4

standard

— Backward compatible with Am29F and Am29LV families

■ CFI (Common Flash Interface) complaint

— Provides device-specific information to the system, allowing

host software to easily reconfigure for different Flash devices

■ Erase Suspend / Erase Resume

— Suspends an erase operation to allow read or program

operations in other sectors of same bank

■ Unlock Bypass Program command

— Reduces overall programming time when issuing multiple

program command sequences

HARDWARE FEATURES

■ Ready/Busy# pin (RY/BY#)

— Provides a hardware method of detecting program or erase

cycle completion

■ Hardware reset pin (RESET#)

— Hardware method to reset the device to reading array data

■ WP#/ACC (Write Protect/Accelerate) input

—At VIL, protects the first and last two 4K word sectors,

regardless of sector protect/unprotect status

—At VIH, allows removal of sector protection

—At V

HH, provides faster programming times in a factory

setting

■ Persistent Sector Protection

— A command sector protection method to lock combinations

of individual sectors and sector groups to prevent program or

erase operations within that sector

— Sectors can be locked and unlocked in-system at V

CC level

■ Password Sector Protection

— A sophisticated sector protection method to lock

combinations of individual sectors and sector groups to

prevent program or erase operations within that sector using

a user-defined 64-bit password

■ Package options

— 63-ball Fine-pitch BGA

— 80-ball Fine-pitch BGA

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