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FIR2N90FG 数据表(PDF) 1 Page - Shenzhen Foster Semiconductor Co., Ltd.

部件名 FIR2N90FG
功能描述  900V N-Channel MOSFET
PDF  8 Pages
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制造商  FOSTER [Shenzhen Foster Semiconductor Co., Ltd.]
网页  http://www.first-semi.com
标志 FOSTER - Shenzhen Foster Semiconductor Co., Ltd.

FIR2N90FG 数据表(HTML) 1 Page - Shenzhen Foster Semiconductor Co., Ltd.

  FIR2N90FG Datasheet HTML 1Page - Shenzhen Foster Semiconductor Co., Ltd. FIR2N90FG Datasheet HTML 2Page - Shenzhen Foster Semiconductor Co., Ltd. FIR2N90FG Datasheet HTML 3Page - Shenzhen Foster Semiconductor Co., Ltd. FIR2N90FG Datasheet HTML 4Page - Shenzhen Foster Semiconductor Co., Ltd. FIR2N90FG Datasheet HTML 5Page - Shenzhen Foster Semiconductor Co., Ltd. FIR2N90FG Datasheet HTML 6Page - Shenzhen Foster Semiconductor Co., Ltd. FIR2N90FG Datasheet HTML 7Page - Shenzhen Foster Semiconductor Co., Ltd. FIR2N90FG Datasheet HTML 8Page - Shenzhen Foster Semiconductor Co., Ltd.  
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5
900V N-Channel MOSFET
Absolute Maximum Ratings (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VDSS
Drain-Source Voltage
900
V
ID
Drain Current
Tj=25℃
2.0
A
Tj=100℃
1.25
VGS(TH)
Gate Threshold Voltage
±30
V
EAS
Single Pulse Avalanche Energy (note1)
180
mJ
IAR
Avalanche Current (note2)
2.0
A
PD
Power Dissipation (Tj=25℃)
25
W
Tj
Junction Temperature(Max)
150
℃
Tstg
Storage Temperature
-55~+150
℃
TL
Maximum lead temperature for soldering purpose,1/8” from
case for 5 seconds
300
℃
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
Unit
RθJC
Thermal Resistance,Junction to Case
-
℃/W
RθJA
Thermal Resistance,Junction to Ambient
-
120
℃/W
Features:
□ Low Intrinsic Capacitances.
□ Excellent Switching Characteristics.
□ Extended Safe Operating Area.
□ Unrivalled Gate Charge :Qg=
12nC (Typ.).
□ BVDSS=
900V,ID=2A
□ R
DS(on) :
7.2Ω (Max) @VG=10V
□ 100% Avalanche Tested
FIR2N90FG
REV:1.0
Page 1/8
@ 2018 Copyright By American First Semiconductor
YAWW
G
D
S
S
G
D
Marking Diagram
A
= Assembly Location
Y
= Year
WW
= Work Week
= Specific Device Code
FIR2N90F
PIN Connection
TO-220F
FIR2N90F
g
Schematic dia ram


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