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MBR2060F 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited |
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MBR2060F 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc website：www.iscsemi.com isc & iscsemi is registered trademark 1 Schottky Barrier Rectifier MBR2060F FEATURES · With TO-220F packaging · High junction temperature capability · Low forward voltage · High current capability · Low power loss, high efficiency · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Switching power supply · Free-Wheeling diodes · Reverse battery protection · Center tap configuration ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VRRM VRMS VR Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage 60 V IF(AV) Average Rectified Forward Current @Tc=110℃ 20 A IFSM Nonrepetitive Peak Surge Current (10ms single half sine-wave superimposed on rated load conditions) 150 A TJ Junction Temperature -40~150 ℃ Tstg Storage Temperature Range -40~150 ℃ |
类似零件编号 - MBR2060F |
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类似说明 - MBR2060F |
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