FIR100N03DFNG datasheet(2/7 Pages) FOSTER

2 / 7 page

FIR100N03DFNG

Electrical Characteristics (TC=25℃unless otherwise noted)

Parameter

Symbol

Condition

Min

Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

BVDSS

VGS=0V ID=250μA

Zero Gate Voltage Drain Current

IDSS

VDS=30V,VGS=0V

μA

Gate-Body Leakage Current

IGSS

VGS=±20V,VDS=0V

±100

On Characteristics

(Note 3)

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=250μA

1.2

1.7

2.5

VGS=10V, ID=20A

1.9

2.5

Drain-Source On-State Resistance

RDS(ON)

VGS=4.5V, ID=10A

2.9

3.5

mΩ

Forward Transconductance

gFS

VDS=10V,ID=20A

Dynamic Characteristics

(Note4)

Input Capacitance

Clss

5000

Output Capacitance

Coss

1135

Reverse Transfer Capacitance

Crss

VDS=15V,VGS=0V,

F=1.0MHz

563

Switching Characteristics

(Note 4)

Turn-on Delay Time

td(on)

Turn-on Rise Time

Turn-Off Delay Time

td(off)

Turn-Off Fall Time

VDD=15V, RL=15Ω

VGS=10V,RG=2.5Ω

Total Gate Charge

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

VDS=15V,ID=20A,

VGS=10V

Drain-Source Diode Characteristics

Diode Forward Voltage

(Note 3)

VSD

VGS=0V,IS=10A

1.2

Diode Forward Current

(Note 2)

100

Reverse Recovery Time

trr

Reverse Recovery Charge

Qrr

TJ = 25°C, IF = 20A

di/dt = 100A/μs

(Note3)

Forward Turn-On Time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

Repetitive Rating: Pulse width limited by maximum junction temperature.

Surface Mounted on FR4 Board, t ≤ 10 sec.

Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production

www.First-semi.com

Page 2/7

FIR100N03DFNG 数据表(PDF) 2 Page - Shenzhen Foster Semiconductor Co., Ltd.

FIR100N03DFNG 数据表(HTML) 2 Page - Shenzhen Foster Semiconductor Co., Ltd.

Html Pages

1 2 3 4 5 6 7

数据表下载