SM7311DHKP datasheet(3/11 Pages) SINOPWER

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SM7311DHKP

Rev. A.1 - November, 2018

www.sinopowersemi.com

Electrical Characteristics (TA= 25°C unless otherwise noted)

Symbol

Parameter

Test Conditions

Min.

Typ. Max. Unit

Static Characteristics

BVDSS Drain-Source Breakdown Voltage

VGS=0V, IDS=250mA

100

IDSS

Zero Gate Voltage Drain Current

VDS=80V, VGS=0V

TJ=85°C

VGS(th) Gate Threshold Voltage

VDS=VGS, IDS=250mA

IGSS

Gate Leakage Current

VGS=±20V, VDS=0V

±10

RDS(ON) d Drain-Source On-state Resistance

VGS=10V, IDS=11A

16.1

19.3

VGS=4.5V, IDS=7A

Diode Characteristics

VSD d

Diode Forward Voltage

ISD=5A, VGS=0V

0.8

1.3

trr

Reverse Recovery Time

ISD=11A, dlSD/dt=100A/ms

Qrr

Reverse Recovery Charge

Dynamic Characteristics e

Gate Resistance

VGS=0V,VDS=0V,F=1MHz

Ciss

Input Capacitance

VGS=0V,

VDS=50V,

Frequency=1.0MHz

1150 1500

Coss

Output Capacitance

180

Crss

Reverse Transfer Capacitance

td(ON)

Turn-on Delay Time

VDD=30V, RL=30W,

IDS=1A, VGEN=10V,

RG=6W

Turn-on Rise Time

td(OFF)

Turn-off Delay Time

Turn-off Fall Time

Gate Charge Characteristics e

Total Gate Charge

VDS=50V, VGS=10V,

IDS=11A

Total Gate Charge

VDS=50V, VGS=4.5V,

IDS=11A

Qgs

Gate-Source Charge

4.3

Qgd

Gate-Drain Charge

5.4

Note d：Pulse test ; pulse width≤300ms, duty cycle≤2%.

Note e：Guaranteed by design, not subject to production testing.

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