SPICE Device Model Si6433BDQ

Vishay Siliconix

www.vishay.com

Document Number: 72565

2

21-May-04

°C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Conditions

Simulated

Data

Measured

Data

Unit

Static

Gate Threshold Voltage

−250 µA

1.2

V

On-State Drain Current

b

−5 V, V

−4.5 V

75

A

−4.5 V, I

−4.8 A

0.031

0.032

Drain-Source On-State Resistance

b

−2.5 V, I

−3.6 A

0.050

0.053

Ω

Forward Transconductance

b

−5 V, I

−4.8 A

13

14

S

Diode Forward Voltage

b

−1.35 A, V

−0.79

−0.77

V

Dynamic

a

Total Gate Charge

8.7

10

Gate-Source Charge

1.8

1.8

Gate-Drain Charge

−6 V, V

−4.5 V, I

−4.8 A

3

3

nC

Turn-On Delay Time

43

45

Rise Time

26

60

Turn-Off Delay Time

67

70

Fall Time

−6 V, R

Ω

≅ −1 A, V

−4.5 V, R

Ω

18

35

ns

Notes

a. Guaranteed by design, not subject to production testing.

b. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2%.

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