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SM1691OSCS 数据表(PDF) 4 Page - Sinopower Semiconductor Inc |
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SM1691OSCS 数据表(HTML) 4 Page - Sinopower Semiconductor Inc |
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4 / 12 page ![]() www.sinopowersemi.com 4 SM1691OSCS ® Copyright ã Sinopower Semiconductor, Inc. Rev. A.3 - May, 2018 Symbol Parameter Test Conditions Min. Typ. Max. Unit Diode Characteristics VBR Reverse Breakdown Voltage IBR=250μA 40 - - V VF c Diode Forward Voltage IF=0.02A - - 0.4 V IF=0.2A - - 0.6 V IR Reverse Current VBR=32V - - 5 μA CT Total Capacitance VBR=20V, Frequency=1.0MHz - 4.6 - pF trr Reverse Recovery Time IF=1A, dlF/dt=100A/ms, VBR=25V - 4.1 - ns Qrr Reverse Recovery Charge - 1 - nC Note c:Pulse test ; pulse width £300 ms, duty cycle£2%. Note d:Guaranteed by design, not subject to production testing. Electrical Characteristics (Cont.) · Channel 2 |
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