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DAM70N60C 数据表(PDF) 2 Page - DACO SEMICONDUCTOR CO.,LTD.

部件名 DAM70N60C
功能描述  N-Channel Enhancement Mode MOSFET
PDF  4 Pages
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制造商  DACO [DACO SEMICONDUCTOR CO.,LTD.]
网页  http://www.dacosemi.com/
标志 DACO - DACO SEMICONDUCTOR CO.,LTD.

DAM70N60C 数据表(HTML) 2 Page - DACO SEMICONDUCTOR CO.,LTD.

  DAM70N60C Datasheet HTML 1Page - DACO SEMICONDUCTOR CO.,LTD. DAM70N60C Datasheet HTML 2Page - DACO SEMICONDUCTOR CO.,LTD. DAM70N60C Datasheet HTML 3Page - DACO SEMICONDUCTOR CO.,LTD. DAM70N60C Datasheet HTML 4Page - DACO SEMICONDUCTOR CO.,LTD.  
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Electrical Characteristics @ TJ =25°C (unless otherwise specified)
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
OFF Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V
IDS=250uA
60
-
-
V
Zero Gate Voltage Drain Current
IDSS
VGS=0V
VDS=60V
-
-
1
uA
Gate-Body Leakage
IGSS
VGS=±25V
VDS=0V
-
-
±100
nA
ON Characteristics
Gate Threshold Voltage
VTH
VDS=VGS
IDS=250uA
2.5
3
4
V
Static Drain-Source On-Resistance
RDS(on)
VGS=10V
IDS=20A
-
6.8
8.2
Dynamic Characteristics
Input Capacitance
Ciss
VDS=30V
VGS=0V
Freq.=1MHz
-
1690
2600
pF
Output Capacitance
Coss
-
294
450
Reverse Transfer Capacitance
Crss
-
90
180
Switching Characteristics
Turn-On Delay Time
Td(on)
VDD=30V
VGS=10V
RG =
IDS=1A
-
16
30
ns
Rise Time
Tr
-
12
24
Turn-Off Delay Time
Td(off)
-
32
55
Fall Time
Tf
-
23
40
Total Gate Charge
Qg
VDS=30V
VGS=10V
IDS=10A
-
26.9
48
nC
Gate to Source Charge
Qgs
-
10.7
20
Gate to Drain Charge
Qgd
-
6.55
13
Drain-Source Diode Characteristics
Diode Forward Voltage
VSD
VGS=0V
IS=1A
-
-
1
V
Notes:
1.Pulse Test: Pulse Width
300 s, Duty Cycle
2%.
2. VDD=25V,VGS=10V,L=0.1mH,IAS=69A., Starting TJ=25°C
DAM70N60C
3. R JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
R JC is guaranteed by design while R CA is determined by the user's board design. R JA shown below for single device operation on FR-4 in still air.



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