DAM10N600F datasheet(1/4 Pages) DACO

部件名	DAM10N600F

功能描述	N-Channel Enhancement Mode MOSFET

PDF	4 Pages

Scroll/Zoom	100%

制造商	DACO [DACO SEMICONDUCTOR CO.,LTD.]

网页	http://www.dacosemi.com/

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1 / 4 page

N-Channel Enhancement Mode MOSFET

Features

VDSS = 600V

RDS(ON)

Typ.0.56Ω @ VGS = 10V

Fully Avalanche Rated

Pb Free & RoHS Compliant

Applications

Backlighting

Synchronous Rectifiers

Absolute Maximum Ratings (Tc=25°C unless otherwise noted)

Parameter

Symbol

Ratings

Unit

Drain Source Voltage

VDS

600

V

Gate Source Voltage

VGS

±30

V

Drain Current Continuous

@ Tc = 25°C

ID

10

A

@ Tc = 100°C

6.3

Drain Current Pulsed@ TC = 25°C

IDM

40

A

Single Pulse Avalanche Energy

EAS

720

mJ

Single Pulse Avalanche Current

IAS

12

A

Maximum Power Dissipation

PD

44.6

W

Storage Temperature Range

TSTG

-55 to +150

°C

Operating Junction Temperature Range

TJ

-55 to +150

°C

Thermal Resistance Junction to Case

R

θJc

2.8

°C/W

Aug.2017

DAM10N600F

Note3

类似零件编号 - DAM10N600F

制造商	部件名	数据表	功能描述
DACO SEMICONDUCTOR CO.,...	DAM10N600C	281Kb / 4P	N-Channel Enhancement Mode MOSFET

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