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WNMD2180 数据表(PDF) 4 Page - Will Semiconductor Ltd. |
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WNMD2180 数据表(HTML) 4 Page - Will Semiconductor Ltd. |
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4 / 8 page ![]() WNMD2180 Typical Characteristics (Ta=25oC, unless otherwise noted) Output characteristics On-Resistance vs. Drain current On-Resistance vs. Junction temperature Transfer characteristics On-Resistance vs. Gate-to-Source voltage Threshold voltage vs. Temperature 0.0 0.5 1.0 1.5 2.0 0 4 8 12 T=-55OC T=25OC V GS- Gate to Source Voltage(V) V DS=0.5V T=125OC 12345 8 12 16 20 24 V GS-Gate to Source Voltage(V) I D=7A -50 0 50 100 150 0.8 1.0 1.2 1.4 1.6 V GS=4.5V I D=7A Temperature(C) -50 0 50 100 150 0.4 0.6 0.8 1.0 1.2 Temperature (C) I D=250uA 0.00.4 0.81.2 0 10 20 30 40 V GS=4.5V V GS=3.1V V GS=4V V GS=2.5V V GS=1.8V V DS- Drain to Source Voltage(V) Will Semiconductor Ltd. 4 4 6 8 10 12 14 16 18 5 10 15 20 2.5V 1.8V 3.1V 3.8V 4V 4.5V I DS-Drain to Source Current(A) 2017/05/26- Rev.1.2 |
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