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STTH1002C 数据表(PDF) 4 Page - STMicroelectronics

部件名 STTH1002C
功能描述  HIGH EFFICIENCY ULTRAFAST DIODE
PDF  8 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STTH1002C 数据表(HTML) 4 Page - STMicroelectronics

  STTH1002C Datasheet HTML 1Page - STMicroelectronics STTH1002C Datasheet HTML 2Page - STMicroelectronics STTH1002C Datasheet HTML 3Page - STMicroelectronics STTH1002C Datasheet HTML 4Page - STMicroelectronics STTH1002C Datasheet HTML 5Page - STMicroelectronics STTH1002C Datasheet HTML 6Page - STMicroelectronics STTH1002C Datasheet HTML 7Page - STMicroelectronics STTH1002C Datasheet HTML 8Page - STMicroelectronics  
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STTH1002C
4/8
t(ns)
rr
0
10
20
30
40
50
60
70
80
10
100
1000
dI /dt(A/µs)
F
I =5A
F
V =160V
R
T =25°C
j
T =125°C
j
Fig. 6: Reverse recovery time versus dIF/dt
(typical values, per diode).
I(A)
RM
0
1
2
3
4
5
6
7
8
9
10
11
12
13
10
100
1000
dI /dt(A/µs)
F
I =5A
F
V =160V
R
T =25°C
j
T =125°C
j
Fig. 7: Peak reverse recovery current versus dIF/dt
(typical values, per diode).
IRM
Qrr
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
25
50
75
100
125
150
T (°C)
j
Q;
rr I
[T ]/Q ;I
[T =125°C]
RM
j
rr RM
j
I =5A
F
V =160V
R
Fig. 8:
Dynamic parameters versus junction
temperature.
0
10
20
30
40
50
60
70
80
90
100
0
2
4
6
8
10
12
14
16
18
20
R
(°C/W)
th(j-a)
S(Cu)(cm²)
Fig. 9-2: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, eCU: 35µm) for DPAK.
0
10
20
30
40
50
60
70
80
02468
10
12
14
16
18
20
S(Cu)(cm²)
R
(°C/W)
th(j-a)
Fig. 9-1: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, eCU: 35µm) for D
2PAK.
Q (nC)
rr
0
20
40
60
80
100
120
140
160
180
200
220
240
10
100
1000
dI /dt(A/µs)
F
I =5A
F
V =160V
R
T =25°C
j
T =125°C
j
Fig. 5: Reverse recovery charges versus dIF/dt
(typical values, per diode).



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