IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

6,306,728B1

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

TO-263 AA Outline

1. Gate

2. Collector

3. Emitter

4. Collector

BottomSide

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

A

4.06

4.83

.160

.190

A1

2.03

2.79

.080

.110

b

0.51

0.99

.020

.039

b2

1.14

1.40

.045

.055

c

0.46

0.74

.018

.029

c2

1.14

1.40

.045

.055

D

8.64

9.65

.340

.380

D1

7.11

8.13

.280

.320

E

9.65

10.29

.380

.405

E1

6.86

8.13

.270

.320

e

2.54

BSC

.100

BSC

L

14.61

15.88

.575

.625

L1

2.29

2.79

.090

.110

L2

1.02

1.40

.040

.055

L3

1.27

1.78

.050

.070

L4

0

0.38

0

.015

R

0.46

0.74

.018

.029

Pins: 1 - Gate

2 - Collector

3 - Emitter

4 - Collector

Bottom Side

TO-220 AB Dimensions

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

I

C

= I

12

16

S

Pulse test, t

≤ 300 µs, duty cycle ≤ 2 %

C

ies

1750

pF

C

oes

V

100

pF

C

res

38

pF

I

C(ON)

V

90

A

Q

g

73

nC

Q

ge

I

C

= I

13

nC

Q

gc

26

nC

t

d(on)

30

ns

t

ri

30

ns

t

d(off)

350

700

ns

t

fi

280

700

ns

E

off

3.5

8.0

mJ

t

d(on)

30

ns

t

ri

30

ns

E

on

0.65

mJ

t

d(off)

700

ns

t

fi

520

ns

E

off

6.5

mJ

R

thJC

0.83

K/W

R

thCK

TO-220

0.5

K/W

Inductive load, T

°°°°C

I

C

= I

V

Remarks: Switching times may

increase for V

higher T

Inductive load, T

°°°°C

I

C

= I

V

Remarks: Switching times may

increase for V

higher T

IXGA 20N100

IXGP 20N100

Min. Recommended Footprint

(Dimensions in inches and mm)