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DAM7D5W30S 数据表(PDF) 1 Page - DACO SEMICONDUCTOR CO.,LTD. |
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DAM7D5W30S 数据表(HTML) 1 Page - DACO SEMICONDUCTOR CO.,LTD. |
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1 / 4 page  N+N-Channel Enhancement Mode MOSFET Features VDSS = 30V RDS(ON) Typ.15mΩ @ VGS = 10V Improved dv/dt capability Pb Free & RoHS Compliant Green Device Available Applications Backlighting Synchronous Rectifiers Absolute Maximum Ratings (Tc=25°C unless otherwise noted) Parameter Symbol Ratings Unit Drain Source Voltage VDS 30 V Gate Source Voltage VGS ±20 V Drain Current Continuous @ Tc = 25°C ID 7.5 A @ Tc = 100°C 4.8 Drain Current Pulsed@ TC = 25°C IDM 30 A Single Pulse Avalanche Energy EAS 14 mJ Single Pulse Avalanche Current IAS 17 A Maximum Power Dissipation PD 2.1 W Storage Temperature Range TSTG -55 to +150 °C Operating Junction Temperature Range TJ -55 to +150 °C Thermal Resistance Junction to ambient R θJA 60 °C/W Aug.2017 DAM7D5W30S Note3 |
类似零件编号 - DAM7D5W30S |
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类似说明 - DAM7D5W30S |
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