2SB1202-R datasheet(1/3 Pages) KEXIN

部件名	2SB1202-R

功能描述	PNP Transistors

PDF	3 Pages

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制造商	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

网页	http://www.kexin.com.cn/index.asp

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1

Transistors

PNP Transistors

2SB1202

■

Features

●

Low collector-to-emitter saturation voltage.

●

Fast switching speed.

●

Large current capacity and wide ASO.

●

Complementary to 2SD1802

2.3

0.60+ 0.1

- 0.1

6.50+0.15

-0.15

0.80+0.1

-0.1

4 .60 +0.15

-0.15

5.30+0.2

-0.2

2.30 +0.1

-0.1

0.50 +0.8

-0.7

0.127

max

TO-252

Unit: mm

1 Base

2 Collector

3 Emitter

■

Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Collector - Base Voltage

VCBO

-60

Collector - Emitter Voltage

VCEO

-50

Emitter - Base Voltage

VEBO

-6

Collector Current - Continuous

IC

-3

Collector Current - Pulse

ICP

-6

Collector Power Dissipation

Tc = 25℃

15

1

Junction Temperature

TJ

150

Storage Temperature range

Tstg

-55 to 150

V

℃

PC

W

A

■

Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

VCBO

Ic= -100 μA， IE=0

-60

Collector- emitter breakdown voltage

VCEO

Ic= -1 mA, RBE=∞

-50

Emitter - base breakdown voltage

VEBO

IE= -100μA， IC=0

-6

Collector-base cut-off current

ICBO

VCB= -50V , IE=0

-1

Emitter cut-off current

IEBO

VEB= -5V , IC=0

-1

Collector-emitter saturation voltage

VCE(sat) IC=-2 A, IB=-100mA

-0.35 -0.7

Base - emitter saturation voltage

VBE(sat) IC=-2 A, IB=-100mA

-0.94 -1.2

VCE= -2V, IC= -100 mA

100

560

VCE= -2V, IC= -3 A

35

Turn-ON Time

ton

70

Storage Time

tstg

450

Fall Time

tf

35

Collector output capacitance

Cob

VCB= -10V, IE= 0,f=1MHz

39

pF

Transition frequency

fT

VCE= -10V, IC= -50mA

150

MHz

DC current gain

hFE

See specified Test Circuit

ns

V

uA

■

Classification of hfe(1)

Type

2SB1202-R 2SB1202-S

2SB1202-T

2SB1202-U

Range

100-200

140-280

200-400

280-560

类似零件编号 - 2SB1202-R

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