IXTQ180N055T datasheet(1/5 Pages) IXYS

部件名	IXTQ180N055T

功能描述	Trench Gate Power MOSFET

PDF	5 Pages

Scroll/Zoom	100%

制造商	IXYS [IXYS Corporation]

网页	http://www.ixys.com

标志

1 / 5 page

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 175°C55

V

DGR

T

J

= 25

°C to 175°C; R

GS = 1 MΩ

55

V

GSM

±20

V

I

D25

T

C

= 25

°C

180

A

I

DRMS

External lead current limit

75

A

I

DM

T

C

= 25

°C, pulse width limited by T

JM

600

A

I

AR

T

C

= 25

°C75

A

E

AS

T

C

= 25

°C

1.0

J

dv/dt

I

S

≤ I

DM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,

3

V/ns

T

J

≤ 150°C, R

G = 10 Ω

P

D

T

C

= 25

°C

360

W

T

J

-55 ... +175

°C

T

JM

175

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.062 in.) from case for 10 s

300

°C

Maximum tab temperature for soldering

260

°C

TO-263 package for 10s

M

d

Mounting torque

(TO-3P / TO-220)

1.13/10 Nm/lb.in.

Weight

TO-3P

5.5

g

TO-220

4

g

TO-263

3

g

G = Gate

D = Drain

S = Source

TAB = Drain

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

Min.

Typ.

Max.

V

DSS

V

GS

= 0 V, I

D = 250 µA55

V

GS(th)

V

DS

= V

GS, ID = 1 mA

2.0

4.0

V

I

GSS

V

GS

=

±20 V

DC, VDS = 0

±200

nA

I

DSS

V

DS

= V

DSS

1

µA

V

GS = 0 V

T

J = 125°C

250

µA

R

DS(on)

V

GS

= 10 V, I

D = 50 A

3.3

4.0

m

Ω

Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

Trench Gate

Power MOSFET

Advance Technical Information

N-Channel Enhancement Mode

Features

International standard packages

Unclamped Inductive Switching (UIS)

rated

Low package inductance

- easy to drive and to protect

Advantages

Easy to mount

Space savings

High power density

TO-3P (IXTQ)

TO-263 (IXTA)

TO-220 (IXTP)

G

D

S

(TAB)

D

(TAB)

G

S

G

S

(TAB)

IXTQ 180N055T

IXTA 180N055T

IXTP 180N055T

V

DSS

=

55

V

I

D25

= 180

A

R

DS(on)

=

4.0 m

Ω

DS99342(02/05)

类似零件编号 - IXTQ180N055T

制造商	部件名	数据表	功能描述
IXYS Corporation	IXTQ180N085T	209Kb / 5P	N-Channel Enhancement Mode
Inchange Semiconductor ...	IXTQ180N085T	303Kb / 2P	isc N-Channel MOSFET Transistor

More results

类似说明 - IXTQ180N055T

制造商	部件名	数据表	功能描述
IXYS Corporation	FMM50-025TF	101Kb / 2P	Trench Gate HiperFET N-Channel Power MOSFET
	FMM60-02TF	101Kb / 2P	Trench Gate HiperFET N-Channel Power MOSFET
	IXFA102N15T	224Kb / 6P	Trench Gate Power MOSFET HiperFET
	IXFV110N25T	191Kb / 5P	Trench Gate Power HiperFET
	IXTH200N075T	190Kb / 5P	Preliminary Technical Information Trench Gate Power MOSFET
	IXTA50N25T	235Kb / 6P	Trench Gate Power MOSFET N-Channel Enhancement Mode
Solid States Devices, I...	FT0020	43Kb / 2P	N-Channel Trench Gate MOSFET
Solid States Devices, I...	FT0021	43Kb / 2P	N-Channel Trench Gate MOSFET
IXYS Corporation	IXTP160N085T	141Kb / 5P	Trench Gate Power MOSFET
Solid States Devices, I...	FT0021	43Kb / 2P	N-Channel Trench Gate MOSFET