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DAM75P60C 数据表(PDF) 2 Page - DACO SEMICONDUCTOR CO.,LTD.

部件名 DAM75P60C
功能描述  P-Channel Enhancement Mode MOSFET
PDF  4 Pages
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制造商  DACO [DACO SEMICONDUCTOR CO.,LTD.]
网页  http://www.dacosemi.com/
标志 DACO - DACO SEMICONDUCTOR CO.,LTD.

DAM75P60C 数据表(HTML) 2 Page - DACO SEMICONDUCTOR CO.,LTD.

  DAM75P60C Datasheet HTML 1Page - DACO SEMICONDUCTOR CO.,LTD. DAM75P60C Datasheet HTML 2Page - DACO SEMICONDUCTOR CO.,LTD. DAM75P60C Datasheet HTML 3Page - DACO SEMICONDUCTOR CO.,LTD. DAM75P60C Datasheet HTML 4Page - DACO SEMICONDUCTOR CO.,LTD.  
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Electrical Characteristics @ TJ =25°C (unless otherwise specified)
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
OFF Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V
IDS=-250uA
-60
-
-
V
Zero Gate Voltage Drain Current
IDSS
VGS=0V
VDS=-60V
-
-
-1
uA
Gate-Body Leakage
IGSS
VGS=±20V
VDS=0V
-
-
±100
nA
ON Characteristics
Gate Threshold Voltage
VTH
VDS=VGS
IDS=-250uA
-1.2
-1.6
-2.5
V
Static Drain-Source On-Resistance
RDS(on)
VGS=-10V
IDS=-20A
-
7.8
9.5
Dynamic Characteristics
Input Capacitance
Ciss
VDS=-25V
VGS=0V
Freq.=1MHz
-
8620
12930
pF
Output Capacitance
Coss
-
486
730
Reverse Transfer Capacitance
Crss
-
288
430
Switching Characteristics
Turn-On Delay Time
Td(on)
VDD=-48V
VGS=-10V
RG =
IDS=-1A
-
70
140
ns
Rise Time
Tr
-
205
410
Turn-Off Delay Time
Td(off)
-
402
804
Fall Time
Tf
-
197
394
Total Gate Charge
Qg
VDS=-48V
VGS=-10V
IDS=-5A
-
141
210
nC
Gate to Source Charge
Qgs
-
17
25.5
Gate to Drain Charge
Qgd
-
28.6
43
Drain-Source Diode Characteristics
Diode Forward Voltage
VSD
VGS=0V
IS=-1A
-
-
-1
V
Notes:
1. Pulse Test: Pulse Width
300 s, Duty Cycle
2%.
2. VDD=50V,VGS=10V,L=0.1mH,IAS=80A.,RG=
25Ω, Starting TJ=25°C
3. R JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
R
R JC is guaranteed by design while R CA is determined by the user's board design. R JA shown below for single device operation on FR-4 in still air.
Aug.2017
DAM75P60C



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