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EMFA0P02JS 数据表(PDF) 4 Page - Excelliance MOS Corp. |
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EMFA0P02JS 数据表(HTML) 4 Page - Excelliance MOS Corp. |
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4 / 5 page ![]() 2015/7/15 p.4 EMFA0P02JS Gate Threshold Voltage v.s. Junction Temperature T ‐ Junction Temperature ( °C ) 0 ‐50 0.50 0.25 0.75 J 050 1.00 1.25 1.50 150 100 DC 10 m s 10 s 1 s 10 0m s μ 10 0 s 1m s 0. 01 0. 1 1 10 100 ‐ V ,D r a in ‐ So u r c e Vo lt a g e ( V ) 0. 1 1 10 100 Ma x im u m Sa f e Op e r a t io n Ar e a R = 16 6 C/ W JA T = 25 C SI N G L E PU L S E GS V = ‐ 4.5V A θ ° ° D S (O N ) R LI M IT DS Single Pulse Maximum Power Dissipation 5 4 3 2 1 0 0.1 1 10 100 1000 Single Pulse Time( sec ) Single Pulse RθJA=166°C/W TA=25°C 1 0.5 0.2 0.1 0.05 0.02 0.01 0.0001 0.001 0.01 0.1 1 10 100 300 t1 t2 TJ‐TA=P*RθJA(t) Duty Cycle, D= t1/ t2 RθJA=166°C/W RθJA(t) = r(t) * RθJA t1, Time( sec ) Transient Thermal Response Curve D=0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse |
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