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VP1310 数据表(PDF) 2 Page - Supertex, Inc |
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VP1310 数据表(HTML) 2 Page - Supertex, Inc |
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2 / 4 page ![]() 7-252 90% 10% 90% 90% 10% 10% PULSE GENERATOR V DD R L OUTPUT D.U.T. t (ON) t d(ON) t (OFF) t d(OFF) t F t r INPUT INPUT OUTPUT 0V V DD R gen 0V -10V VP1304/VP1306/VP1310 Switching Waveforms and Test Circuit Package ID (continuous)* ID (pulsed) Power Dissipation θ jc θ ja IDR*IDRM @ TC = 25°C °C/W °C/W TO-92 -0.15A -0.65A 1.0W 125 170 -0.15A -0.65A * ID (continuous) is limited by max rated Tj. TA = 25°C Thermal Characteristics Symbol Parameter Min Typ Max Unit Conditions VP1310 -100 VP1306 -60 VP1304 -40 V GS(th) Gate Threshold Voltage -1.5 -3.5 V V GS = VDS, ID = -1mA ∆V GS(th) Change in V GS(th) with Temperature -3.2 -3.85 mV/ °CV GS = VDS, ID = -1mA I GSS Gate Body Leakage -0.1 -100 nA V GS = ±20V, VDS = 0V I DSS Zero Gate Voltage Drain Current -10 V GS = 0V, VDS = Max Rating µAV GS = 0V, VDS = 0.8 Max Rating TA = 125°C ID(ON) ON-State Drain Current -0.08 -0.23 VGS = -5V, VDS = -25V -0.25 -0.7 VGS = -10V, VDS = -25V RDS(ON) 32 40 VGS = -5V, ID = -50mA 19 25 VGS = -10V, ID = -250mA ∆R DS(ON) Change in RDS(ON) with Temperature 0.8 1.1 %/ °CV GS = -10V, ID = -250mA GFS Forward Transconductance 75 120 m VDS = -25V, ID = -200mA CISS Input Capacitance 20 35 COSS Common Source Output Capacitance 12 15 pF CRSS Reverse Transfer Capacitance 3 5 td(ON) Turn-ON Delay Time 3 5 tr Rise Time 3 5 td(OFF) Turn-OFF Delay Time 3 5 tf Fall Time 3 8 VSD Diode Forward Voltage Drop -1.2 -1.7 V ISD = -0.25A, VGS = 0V trr Reverse Recovery Time 350 ns ISD = -0.25A, VGS = 0V Notes: 1. All D.C. parameters 100% tested at 25 °C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Electrical Characteristics (@ 25 °C unless otherwise specified) BV DSS Drain-to-Source Breakdown Voltage A VI D = -1mA, VGS = 0V -500 Static Drain-to-Source ON-State Resistance V DD = -25V ns I D = -250mA RGEN = 25Ω VGS = 0V, VDS = -25V f = 1 MHz Ω |
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