MBR1050 datasheet(1/2 Pages) TSC

部件名	MBR1050

功能描述	10.0 AMPS. Schottky Barrier Rectifiers

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制造商	TSC [Taiwan Semiconductor Company, Ltd]

网页	http://www.taiwansemi.com

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MBR1035 THRU MBR10200

10.0 AMPS. Schottky Barrier Rectifiers

Voltage Range

35 to 200 Volts

Current

10.0 Amperes

Features

Plastic material used carries Underwriters Laboratory

Classifications 94V-0

Metal silicon junction, majority carrier conduction

Low power loss, high efficiency

High current capability, low forward voltage drop

High surge capability

For use in low voltage, high frequency inverters, free

wheeling, and polarity protection applications

Guardring for overvoltage protection

High temperature soldering guaranteed:

260

oC/10 seconds,0.25”(6.35mm)from case

Mechanical Data

Cases: JEDEC TO-220A molded plastic body

Terminals: Lead solderable per MIL-STD-750, Method

2026

Polarity: As marked

Mounting position: Any

Mounting torque: 5 in. - lbs. max

Weight: 0.08 ounce, 2.24 grams

TO-220A

Dimensions in inches and (millimeters)

Maximum Ratings and Electrical Characteristics

Rating at 25

℃ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

Type Number

Symbol MBR

1035

MBR

1045

MBR

1050

MBR

1060

MBR

1090

MBR

10100

MBR

10200

Units

Maximum Recurrent Peak Reverse Voltage

VRRM

35

45

50

60

90

100

200

V

Maximum RMS Voltage

VRMS

24

31

35

42

63

70

140

V

Maximum DC Blocking Voltage

VDC

35

45

50

60

90

100

200

V

Maximum Average Forward Rectified Current

See Fig. 1

I(AV)

10

A

Peak Repetitive Forward Current (Square Wave,

20KHz) at Tc=135

oC

IFRM

20.0

A

Peak Forward Surge Current, 8.3 ms Single Half

Sine-wave Superimposed on Rated Load (JEDEC

method )

IFSM

150

A

Peak Repetitive Reverse Surge Current (Note 1)

IRRM

1.0

0.5

A

Voltage Rate of Change (Rated VR)

dV/dt

10,000

V/uS

Maximum Instantaneous Forward Voltage at

(Note 2)

IF=10A, Tc=25

OC

IF=10A, Tc=125

OC

IF=20A, Tc=25

OC

IF=20A, Tc=125

OC

VF

0.70

0.57

0.84

0.72

0.80

0.70

0.95

0.85

0.71

-

1.05

-

V

Maximum Instantaneous Reverse Current

@ Tc =25

℃at Rated DC Blocking Voltage (Note 2)

@ Tc=125

℃

IR

0.1

15.0

0.1

6.0

0.009

10

mA

Typical Junction Capacitance (Note 3)

Cj

350

280

200

pF

M

aximum Thermal Resistance, Junction to Case

R

θJC

3.5

2.0

℃/W

Operating Junction Temperature Range

TJ

-65 to +150

℃

Storage Temperature Range

TSTG

-65 to +175

℃

Notes: 1. 2.0us Pulse Width, f=1.0 KHz

2. Pulse Test: 300us Pulse Width, 1% Duty Cycle

3. Mounted on Heatsink Size of 2 in x 3 in x 0.25in Al-Plate.

.412(10.5)

MAX

.185(4.70)

.175(4.44)

.055(1.40)

.045(1.14)

.27(6.86)

.23(5.84)

.11(2.79)

.10(2.54)

.025(0.64)

.014(0.35)

.154(3.91)

.148(3.74)

DIA

PIN1

2

.113(2.87)

.103(2.62)

.16(4.06)

.14(3.56)

.037(0.94)

.027(0.68)

.205(5.20)

.195(4.95)

.594(15.1)

.587(14.9)

.56(14.22)

.53(13.46)

类似零件编号 - MBR1050

制造商	部件名	数据表	功能描述
Fairchild Semiconductor	MBR1050	46Kb / 3P	10 Ampere Schottky Barrier Rectifiers
Diodes Incorporated	MBR1050	56Kb / 2P	10A SCHOTTKY BARRIER RECTIFIER DS23009 Rev. G-2
General Semiconductor	MBR1050	66Kb / 2P	SCHOTTKY RECTIFIER
GOOD-ARK Electronics	MBR1050	255Kb / 3P	Schottky Barrier Rectifiers
Diodes Incorporated	MBR1050	75Kb / 3P	10A SCHOTTKY BARRIER RECTIFIER DS23009 Rev. 9 - 2

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