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IRF3205 数据表(PDF) 1 Page - ARTSCHIP ELECTRONICS CO.,LMITED.

部件名 IRF3205
功能描述  HEXFET Power MOSFET
PDF  7 Pages
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制造商  ARTSCHIP [ARTSCHIP ELECTRONICS CO.,LMITED.]
网页  http://www.artschip.com/
标志 ARTSCHIP - ARTSCHIP ELECTRONICS CO.,LMITED.

IRF3205 数据表(HTML) 1 Page - ARTSCHIP ELECTRONICS CO.,LMITED.

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IRF3205
HEXFET ® Power MOSFET
www.artschip.com
1
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175℃ Operating Temperature
Fast Switching
Fully Avalanche Rated
VDSS=55V
RDS(on)=8.0mΩ
ID=110A
⑤
Description
Advanced HEXFET ® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely
low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a
wide variety of applications.
The TO-220 packages is universally preferred for all commercial-industrial applications at power dissipation levels to
approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance
throughout the industry.
Absolute Maximum Ratings
Parameter
Max.
Units
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
110⑤
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
80
IDM
Pulsed Drain Current ①
390
A
PD @ Tc=25℃
Power Dissipation
200
W
Linear Derating Factor
1.3
W/℃
VGS
Gate-to-Source Voltage
±20
V
IAR
Avalanche Current ①
62
A
EAR
Repetitive Avalanche Energy ①
20
mJ
dv/dt
Peak Diode Recovery dv/dt ③
5.0
V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to +175
Soldering Temperature, for 10 seconds
300 (1.6mm from case)
℃
Mounting torque, 6-32 or M3 srew
10 Ibf
•in (1.1 N•m)
Thermal Resistance
Parameter
Typ.
Max.
Units
RӨJC
Junction-to-Case
-
0.75
RӨCS
Case-to-Sink, Flat, Greased Surface
0.50
-
RӨJA
Junction-to-Ambient
-
62
℃
/W


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