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IRFP450 数据表(PDF) 3 Page - ARTSCHIP ELECTRONICS CO.,LMITED. |
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IRFP450 数据表(HTML) 3 Page - ARTSCHIP ELECTRONICS CO.,LMITED. |
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3 / 7 page ![]() IRFP450 N-CHANNEL 500V-0.33Ω - 14A – TO-247 PowerMESHTM MOSFET www.artschip.com 3 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Time Rise Time VDD=250V ID=7A RG=4.7 Ω VGS=10V (see test circuit, figure 1) 24 14 ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD=400V ID=14A VGS=10V 75 13.5 27 nC nC nC SWITCHING OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time VDD=400V ID=14A RG=4.7 Ω VGS=10V (see test circuit, figure 3) 15 25 35 ns ns ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM(•) Source-drain Current Source-drain Current (pulsed) 14 56 A A VSD(*) Forward On Voltage ISD=14A VGS=0 1.4 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD=14A di/dt=100A/µs VDD=100V Tj=150℃ (see test circuit, figure 3) 680 9 26 ns µC A (*) Pulsed: Pulse duration = 300µs, duty cycle 1.5% ( •) Pulse width limited by safe operating area Safe Operating Area Thermal Impedance |
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