IRFZ44/45/40/42

N-CHANNEL POWER MOSFETS

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2

ELECTRICAL CHARACTERISTICS

(Tc=25℃ unless otherwise specified)

Symbol

Characteristic

Min

Typ

Max

Units

Test Conditions

Drain-Source Breakdown Voltage

IRFZ44/45

IRFZ40/42

60

50

-

-

-

-

V

Gate Threshold Voltage

2.0

-

4.0

V

Gate-Source Leakage Forward

-

-

100

nA

Gate-Source Leakage Reverse

-

-

-100

nA

Zero Gate Voltage Drain Current

-

-

-

-

250

1000

µA

µA

On-State Drain-Source Current (2)

35

-

-

A

Static Drain-Source

IRFZ44/40

On-State Resistance IRFZ45/42

-

-

-

-

0.028

0.035

Ω

Forward Transconductance (2)

15

-

-

Ω

Input Capacitance

-

2450

-

pF

Output Capacitance

-

740

-

pF

Reverse Transfer Capacitance

-

360

-

pF

F=1.0MHz

Turn-On Delay Time

-

-

32

ns

tr

Rise Time

-

-

210

ns

Turn-Off Delay Time

-

-

75

ns

tf

Fall Time

-

-

130

ns

(MOSFET switching times are essentially

independent of operating temperature)

Qg

Total Gate Charge

(Gate-Source Pulse Gate-Drain)

-

-

100

nC

Qgs

Gate-Source Charge

-

-

21

nC

Qgd

Gate-Drain (“Miller”) Charge

-

-

58

nC

(Gate charge is essentially independent

of operating temperature)

THERMAL RESISTANCE

Junction-to-Case

Max

1.0

K/W

Case-to-Sink

TYP

0.5

K/W

Mounting surface flat smooth, and greased

Junction-to-Ambient

MAX

80

K/W

Free Air Operation

Notes: (1) TJ=25℃ to 175℃

(2) Pulse test Pulse Width ≤ 300µs, Duty Cycle ≤ 2%

(3) Repetitive rating Pulse width limited by max junction temperature