SGSF464 datasheet(2/7 Pages) STMICROELECTRONICS

2 / 7 page

THERMAL DATA

TO-218

I SO WATT218

Rthj-ca se

Thermal Resistance Junction-Case

Max

2. 2

oC/W

Rthj- amb

Thermal Resistance Junction-Ambient

Max

oC/W

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

ICES

Collect or Cut-off

Current (VBE =0)

VCE = 1200 V

200

µA

ICEO

Collect or Cut-off

Current (IB =0)

VEC =380 V

VEC =600 V

200

µA

IEBO

Emitt er Cut-off Current

(IC =0)

VBE =7 V

VCEO(sus )

∗ Collector-Emitter

Sustaining Voltage

IC = 100 mA

600

VCE(sat)

∗ Collector-Emitter

Saturat ion Voltage

IC =6 A

IB =1.2 A

IC =3. 5 A

IB =0.5 A

1.5

VBE(s at)

∗ Base-Emitter

Saturat ion Voltage

IC =6 A

IB =1.2 A

IC =3.5 A

IB =0.5 A

1.5

tON

Turn-on T ime

St orage Time

Fall T ime

RESI STIVE LO AD

vCC =250 v

IC =6 A

IB1 =1 A

IB1 =-2 A

0.6

2. 45

0. 12

1.2

3.5

0.4

µs

tON

Turn-on T ime

St orage Time

Fall T ime

RESI STIVE LO AD

vCC =250 v

IC =5 A

IB1 =1 A

IB1 =-2 A

With Ant isaturation Network

0.6

1.7

0. 12

µs

tON

Turn-on T ime

St orage Time

Fall T ime

RESI STIVE LO AD

VCC =250 V

IC =5 A

IB1 =1 A

VBE(off)= -5 V

0.6

1.3

0.2

µs

St orage Time

Fall T ime

INDUCTIVE LOAD

IC =5 A

hFE =5

VCL = 450 V

VBE(off) =-5 V

L = 300

µHRBB =0.8 Ω

1.4

0.1

2.8

0.2

µs

St orage Time

Fall T ime

INDUCTIVE LOAD

IC =5 A

hFE =5

VCL = 450 V

VBE(off) =-5 V

L = 300

µHRBB =0.8 Ω

Tc = 100

0.3

µs

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

SGSF464/SGSIF464

2/7

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