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GD25LE32DNIG 数据表(PDF) 71 Page - GigaDevice Semiconductor (Beijing) Inc.

部件名 GD25LE32DNIG
功能描述  1.8V Uniform Sector Dual and Quad Serial Flash
PDF  72 Pages
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制造商  GIGADEVICE [GigaDevice Semiconductor (Beijing) Inc.]
网页  http://www.gigadevice.com/
标志 GIGADEVICE - GigaDevice Semiconductor (Beijing) Inc.

GD25LE32DNIG 数据表(HTML) 71 Page - GigaDevice Semiconductor (Beijing) Inc.

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1.8V Uniform Sector
Dual and Quad Serial Flash
GD25LE32D
71
11. REVISION HISTORY
Version No
Description
Page
Date
1.0
Initial Release
All
Aug. 9, 2016
1.1
Modify VIL max. value from 0.3VCC to 0.2VCC
Modify Icc2 typ. from 0.1uA to 0.2uA
Delete SFDP related contents
P54
P60
All
May. 15, 2017
1.2
Add Package WLCSP
Modify the description of Program/Erase Resume (7AH) command
P64
P44
Jun.19, 2017
1.3
Modify Icc2 max. value from 1 to 5
P54
Jul. 25. 2017
1.4
Modify tw max. value from 30ms to 35ms
Delete tRST_R and tRST_P
Add tRST, max. = 30us
Modify CL (Input Pause Voltage) from “0.3VCC to 0.7VCC” to “0.2VCC
to 0.7VCC
”.
Modify CL
(Input Timing Reference Voltage) from “0.2VCC to 0.8VCC”
to
“0.1VCC to 0.8VCC”.
P55
P55
P55
P53
P53
Sep.13, 2017
1.5
Modify tVSL min value from 5ms to 1.8ms
Modify Icc2 from 0.2-5uA to 0.2-8uA
Modify Icc3@120MHz from 15-20mA to 6-20mA
Modify Icc3@80MHz from 13-18mA to 4-18mA
Add tRS, of which the min value is 100us
Update the description of all packages
P52
P54
P54
P54
P55
P59-64
May.11, 2018
1.6
Add 4BH command
Modify the sequence diagram of 42H command
Modify tBE1 max value from 1s to 0.8s
Add DC/AC parameters @-40℃~105℃
Add DC/AC parameters @-40℃~125℃
P44
P48
P59
P57, 60
P58, 61
Aug.27, 2018
1.7
Modify Icc3@120MHz typ. value from 6mA to 15mA
Modify Icc3@80MHz from typ. value from 4mA to 13mA
Update the drawing of USON8 3x4mm
P56, 57, 58
P56, 57, 58
P67
Jan.25, 2019
1.8
Add tCLQV@15pF, of which the max value is 6ns
P59, 60, 61
Mar.21, 2019



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