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GD25LE32DQIG 数据表(PDF) 23 Page - GigaDevice Semiconductor (Beijing) Inc.

部件名 GD25LE32DQIG
功能描述  1.8V Uniform Sector Dual and Quad Serial Flash
PDF  72 Pages
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制造商  GIGADEVICE [GigaDevice Semiconductor (Beijing) Inc.]
网页  http://www.gigadevice.com/
标志 GIGADEVICE - GigaDevice Semiconductor (Beijing) Inc.

GD25LE32DQIG 数据表(HTML) 23 Page - GigaDevice Semiconductor (Beijing) Inc.

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1.8V Uniform Sector
Dual and Quad Serial Flash
GD25LE32D
23
7.8 Fast Read (0BH) in QPI mode
The Fast Read command is also supported in QPI mode. In QPI mode, the number of dummy clocks is configured by
the
“Set Read Parameters (C0H)” command to accommodate a wide range application with different needs for either
maximum Fast Read frequency or minimum data access latency. Depending on the Read Parameter Bits P[5:4] setting,
the number of dummy clocks can be configured as either 4/6/8.
Figure8a. Read Data Bytes at Higher Speed Sequence Diagram (QPI)
CS#
SCLK
IO0
IO1
IO2
IO3
0
1
2
3
4
5
Command
0BH
20
12
16
8
6
7
8
9
10
4
4
0
0
4
0
4
0
4
21
13
17
9
5
5
1
1
5
1
5
1
5
22
14
18
10
6
6
2
2
6
2
6
2
6
23
15
19
11
7
7
3
3
7
3
7
3
7
A23-16 A15-8
A7-0
Dummy*
11
12 13
IOs switch from
Input to output
Byte1
*"Set Read Parameters" Command (C0H)
can set the number of dummy clocks
Dummy*
7.9 Dual Output Fast Read (3BH)
The Dual Output Fast Read command is followed by 3-byte address (A23-A0) and a dummy byte, and each bit is
latched in on the rising edge of SCLK, then the memory contents are shifted out 2-bit per clock cycle from SI and SO.
The command sequence is shown in followed Figure9. The first byte addressed can be at any location. The address is
automatically incremented to the next higher address after each byte of data is shifted out.
Figure9. Dual Output Fast Read Sequence Diagram
Command
0
1
2
3
4
5
6
7
3BH
CS#
SCLK
SI
SO
High-Z
8
9 10
28 29 30 31
3
2
1
0
23 22 21
24-bit address
MSB
34 35 36 37
33
5
3
1
7
5
3
1
38 39
Data Out1
32
42 43 44 45
41
46 47
40
7
Data Out2
CS#
SCLK
SI
SO
MSB
Dummy Clocks
4
2
0
6
4
2
0
6
6
7



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