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GD25LE10CSIG 数据表(PDF) 25 Page - GigaDevice Semiconductor (Beijing) Inc. |
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GD25LE10CSIG 数据表(HTML) 25 Page - GigaDevice Semiconductor (Beijing) Inc. |
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25 / 75 page ![]() 1.8V Uniform Sector Dual and Quad Serial Flash GD25LE40C/20C/10C/05C 25 Figure8. Read Data Bytes at Higher Speed Sequence Diagram Command 0 1 2 3 4 5 6 7 0BH CS# SCLK SI SO High-Z 8 9 10 28 29 30 31 3 2 1 0 23 22 21 24-bit address MSB 34 35 36 37 33 6 5 4 3 2 1 0 38 39 Data Out1 32 42 43 44 45 41 46 47 40 7 6 5 4 3 2 1 0 7 6 5 7 Data Out2 CS# SCLK SI SO MSB Dummy Byte 7.8 Dual Output Fast Read (3BH) The Dual Output Fast Read command is followed by 3-byte address (A23-A0) and a dummy byte, and each bit is latched in on the rising edge of SCLK, then the memory contents are shifted out 2-bit per clock cycle from SI and SO. The command sequence is shown in followed Figure9. The first byte addressed can be at any location. The address is automatically incremented to the next higher address after each byte of data is shifted out. Figure9. Dual Output Fast Read Sequence Diagram Command 0 1 2 3 4 5 6 7 3BH CS# SCLK SI SO High-Z 8 9 10 28 29 30 31 3 2 1 0 23 22 21 24-bit address MSB 34 35 36 37 33 5 3 1 7 5 3 1 38 39 Data Out1 32 42 43 44 45 41 46 47 40 7 Data Out2 CS# SCLK SI SO MSB Dummy Clocks 4 2 0 6 4 2 0 6 6 7 |
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